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Adaptive series circuit with metal oxide semiconductor (MOS) transistors

A technology of MOS transistors and series circuits, applied in the field of self-adaptive series circuits, can solve the problem of high cost

Active Publication Date: 2012-06-13
SILERGY SEMICON TECH (HANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the application of MOS tubes in many high-voltage applications is limited, such as figure 2 As shown, it is a functional block diagram of a high-voltage switching regulator, in which the switching tube Q needs to withstand a certain high voltage when it is turned off, but can still work safely. At this time, a MOS tube with a large withstand voltage parameter is selected as the switching tube Q. It is very convenient, but the cost is high. In practical applications, the maximum withstand voltage of the existing MOS tube is limited by the production process and sometimes cannot meet the needs

Method used

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  • Adaptive series circuit with metal oxide semiconductor (MOS) transistors
  • Adaptive series circuit with metal oxide semiconductor (MOS) transistors
  • Adaptive series circuit with metal oxide semiconductor (MOS) transistors

Examples

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Embodiment Construction

[0062] Several preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, but the present invention is not limited to these embodiments. The present invention covers any alternatives, modifications, equivalent methods and schemes made on the spirit and scope of the present invention. In order to provide the public with a thorough understanding of the present invention, specific details are set forth in the following preferred embodiments of the present invention, but those skilled in the art can fully understand the present invention without the description of these details.

[0063] refer to image 3 , is shown as a functional block diagram of a first embodiment of an adaptive series circuit of MOS transistors according to the present invention, which includes n adaptive MOS transistors 301-1, 301-2, ... 301-n and a main control MOS transistor 302, a turn-off clamp circuit 303 and n turn-on clamp circuits 304...

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Abstract

The invention discloses an adaptive series circuit with metal oxide semiconductor (MOS) transistors. The on-off motion of a master control MOS transistor is controlled to correspondingly control the adaptive on-off motion of the other MOS transistors, and the MOS transistors are ensured to work safely by utilizing a clamping circuit. The maximum withstand voltage of an equivalent MOS transistor consisting of the MOS transistors is the sum of maximum withstand voltages of all the series-connected MOS transistors. In an actual manufacturing process, limitation on the number of the series-connected MOS transistors is avoided on the premise of not exceeding maximum voltage between the drain of the equivalent MOS transistor and a substrate, so that the limitation of a process on the maximum withstand voltage range of the obtained equivalent MOS transistor is avoided. The adaptive series circuit is applied to places such as a switching regulator and the like requiring quick switching and places such as a light-emitting diode (LED) driving circuit and the like with low requirement for switching speed, and also can be applied to circuits such as a high-voltage step-up regulator, a step-down regulator, a linear regulator and the like.

Description

technical field [0001] The invention relates to a series circuit of MOS tubes, in particular to an adaptive series circuit of MOS tubes. Background technique [0002] At present, the series connection technology of MOS transistors is mainly used to increase the maximum output impedance of the equivalent MOS transistors after series connection, but does not increase its maximum withstand voltage capability. figure 1 Shown is a functional block diagram of connecting two MOS transistors in series in the prior art, wherein the voltage at point A is the sum of the gate-source voltages of MOS transistors 101 and 102, and the increase of the equivalent impedance after the MOS transistors 101 and 102 are connected in series makes The output current at point B has nothing to do with the voltage at this point, but the maximum withstand voltage of the equivalent MOS tube after series connection has not increased. Therefore, the application of MOS tubes in many high-voltage application...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/088
CPCG05F3/02H03K5/084H02M3/33507H03K17/102
Inventor 迈克尔·格林陈君
Owner SILERGY SEMICON TECH (HANGZHOU) CO LTD
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