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Apparatus and method of MBE isoepitaxial growth SrTiO3 film

A homoepitaxy, thin film technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of insufficient chemical ratio precision of thin film materials, deviation of thin film composition, sample differences, etc., to eliminate sample differences, improve Sensitivity, the effect of improving efficiency

Inactive Publication Date: 2012-06-13
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Therefore, the object of the present invention is to provide a kind of MBE homoepitaxial growth SrTiO 3 The thin-film method can overcome the problem of deviation of the film composition caused by the unstable rate of the high-temperature metal source and the problem of insufficient precision of the traditional method to control the stoichiometric ratio of the film material. The present invention also provides a device for automatic molecular beam epitaxy growth of the film, which can Accurately and timely control the beam current of the metal evaporation source, avoiding the problem of sample differences due to different individual experience of experimenters

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  • Apparatus and method of MBE isoepitaxial growth SrTiO3 film
  • Apparatus and method of MBE isoepitaxial growth SrTiO3 film
  • Apparatus and method of MBE isoepitaxial growth SrTiO3 film

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Embodiment 1

[0034] This embodiment provides a MBE homoepitaxial growth SrTiO 3 Thin film methods, including:

[0035] 1) Processing substrate: choose common commercially available SrTiO 3 The (110) substrate was used as the substrate, sputtered with Ar ions at a sputtering dose of 500eV / 2.0μA / 10min, and then annealed in an ultra-high vacuum at 1000°C to obtain SrTiO with a single-phase (4×1) reconstruction 3 (110) surface, which is the SrTiO cut-off surface;

[0036] 2) SrTiO3 (110) Film preparation: Heating the substrate to 800°C, co-depositing Ti and Sr in an oxygen atmosphere, and at the same time performing in-situ real-time monitoring of the sample by reflection high-energy electron diffraction, selecting the [001] direction corresponding to (4×1 ) of the (01) spots of the reconstructed diffraction fringes (such as figure 1 The arrows in the reflective high-energy electron diffraction patterns in the second row and second column of ) are used as characteristic diffraction fringes,...

Embodiment 2

[0044] This embodiment provides a MBE homoepitaxial growth SrTiO 3 Thin film methods, including:

[0045] 1) Processing substrate: choose common commercially available SrTiO 3 The (110) substrate was used as the substrate, sputtered with Ar ions at a sputtering dose of 500eV / 2.0μA / 10min, and then annealed in an ultra-high vacuum at 1000°C to obtain a single-phase (4×1) restructured SrTiO 3 (110) surface, re-growth 0.15 atomic layer of metal Sr to obtain single-phase (5×1) reconstructed SrTiO 3 (110) surfaces;

[0046] 2) SrTiO 3 (110) Film preparation: Heating the substrate to 800°C, co-depositing Ti and Sr in an oxygen atmosphere, and at the same time performing in-situ real-time monitoring of the sample by reflection high-energy electron diffraction, selecting the [001] direction corresponding to (5×1 ) of the (01) spots of the reconstructed diffraction fringes (such as figure 1 The arrows in the reflective high-energy electron diffraction patterns in the second row and...

Embodiment 3

[0054] This embodiment provides a MBE homoepitaxial growth SrTiO 3 thin-film method in SrTiO with single-phase (4 × 1) reconstitution 3 (110) SrTiO growth on substrate surface 3 The thin film is different from the method provided in Example 1 in that an imaging device is used to image the reflective high-energy electron diffraction pattern, and the brightness of the (01) spot of the characteristic diffraction fringe in the [001] direction is monitored in real time, so that the (01) spot Quantification of brightness, and the rest of the growth process is similar to the method provided in Example 1.

[0055] The MBE homoepitaxial growth SrTiO provided in this example 3 Thin film methods include:

[0056] 1) Process the substrate to obtain single-phase (4×1) reconstituted SrTiO 3 (110) substrate surface;

[0057] 2) SrTiO 3 (110) Film preparation: Heating the substrate to 800°C, co-depositing Ti and Sr in an oxygen atmosphere, and at the same time performing in-situ real-ti...

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Abstract

The invention provides a method of an MBE isoepitaxial growth SrTiO3 film. The method comprises steps of: 1) carrying out codeposition of Ti and Sr on a SrTiO3 substrate (110) in an oxygen atmosphere and carrying out real time monitoring of reflective high energy electron diffraction on a sample; and 2) adjusting a beam proportion of Ti and Sr according to brightness of characteristic strips of the reflective high energy electron diffraction to realize a film surface reconstruction the same as a substrate surface reconstruction.

Description

technical field [0001] The invention relates to a method for growing a thin film by molecular beam epitaxial growth, in particular to a method for growing a compound thin film by molecular beam homogeneous epitaxial growth based on a reflective high-energy electron diffractometer. Background technique [0002] The use of molecular beam epitaxy (MBE) technology to grow thin films can effectively reduce the defect density and obtain high-quality thin films. For example, the two-dimensional electron gas at the semiconductor GaAs / AlGaAs interface grown by molecular beam epitaxy can have a carrier mobility of up to 10. 7 cm 2 V -1 the s -1 (Document 1: D.G. Schlom and L.N.Pfeiffer, Nature Mater. 9, 881 (2010)). However, the complex oxide SrTiO was prepared by molecular beam epitaxy 3 Films, encountered many challenges. The control of film composition, especially the composition of metal cations, has always been the key to the preparation of multiple oxides SrTiO by molecular...

Claims

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Application Information

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IPC IPC(8): C30B23/02C30B29/32
Inventor 杨芳汪志明石刘冯加贵郭建东
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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