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Bonding apparatus and bonding method

A bonding device and a technology for bonding parts, which are applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problems of large wiring impedance, decreased productivity of wafer bonding processing, and a large amount of time to achieve high-efficiency bonding, The effect of improving productivity

Inactive Publication Date: 2012-05-16
TOKYO ELECTRON LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

On the other hand, there is a problem that when a plurality of highly integrated devices are connected by wires to produce a product, the length of the wires increases, which increases the impedance of the wires and increases the delay of the wires.
In addition, since the time taken for the joining process is determined by the material used for the joining part, etc., the time spent for the joining process cannot be shortened.
[0008] In this way, since it takes a lot of time to bond wafers having metal bonding portions, the throughput (through-put) of the wafer bonding process decreases.

Method used

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  • Bonding apparatus and bonding method
  • Bonding apparatus and bonding method
  • Bonding apparatus and bonding method

Examples

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Embodiment Construction

[0040] Embodiments of the present invention will be described below. figure 1 It is a longitudinal sectional view showing a schematic configuration of a joining device 10 having a pressing adapter 1 . figure 2 It is a cross-sectional view showing a schematic configuration of the joining device 10 having the pressing attachment 1 .

[0041] In the joining device 10, such as image 3 As shown, for example, two wafers W as substrates U , W L join together. Hereinafter, the wafer disposed on the upper side may be referred to as "upper wafer W U ", the wafer configured on the lower side is called "lower wafer W L ". Each wafer W U , W L Joints J each having a plurality of metals U 、J L . And, make each joint J U 、J L abutment so that the wafer W U , W L stacked to form a stacked wafer W as a stacked substrate T , and then the wafer W U , W L join each other. In addition, during the wafer W U , W L state before engagement of each other, such as image 3 shown i...

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Abstract

A bonding apparatus (10) includes a thermal treating unit (20) and a bonding unit (21) that are integrally bonded together. The thermal treating unit includes a first thermal treating plate (40) for supporting and thermally processing a superimposed substrate (WT). The bonding unit includes a second thermal treating plate (90) for supporting and thermally processing the superimposed substrate (WT) processed in thermal treating unit, and a pressing mechanism (80) for pressing the superimposed substrate against the second thermal treating plate. The first thermal treating plate (40) includes a cooling mechanism (44) for cooling the superimposed substrate placed on the first heating plate. Each unit (20, 21) can depressurize the internal atmosphere to a specified degree of vacuum. The thermal treating unit has a plurality of carrying mechanisms (42) for conveying the wafers between the two units.

Description

technical field [0001] The present invention relates to a bonding device and a bonding method for pressing substrates having metal bonding portions to bond the substrates. Background technique [0002] In recent years, in the manufacture of semiconductor devices (hereinafter referred to as "device"), high integration of devices has been increasing. On the other hand, there is a problem that when a plurality of highly integrated devices are connected by wires to be commercialized, the length of the wires increases, which increases the impedance of the wires and increases the delay of the wires. [0003] Therefore, a three-dimensional integration technique using three-dimensionally stacked semiconductor devices has been proposed. In this three-dimensional integration technique, for example, two semiconductor wafers (hereinafter referred to as "wafers") are bonded using a bonding device. The bonding device includes, for example: a fixed table on which a wafer is placed on its...

Claims

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Application Information

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IPC IPC(8): H01L21/603
CPCH01L2224/75985H01L21/67092H01L2224/75312H01L2224/16145H01L2924/01082H01L24/94H01L2224/81001H01L2224/05624H01L2224/7525H01L24/13H01L2224/75283H01L24/05H01L2924/01029H01L2224/0401H01L2224/75314H01L2924/01013H01L2224/75102H01L25/50H01L2224/75252H01L2224/757H01L2224/81204H01L24/81H01L2224/755H01L25/0657H01L2224/75901H01L2224/75251H01L2924/01033H01L2225/06513H01L2924/01005H01L2924/01006H01L2224/75501H01L2924/01074H01L2224/13117H01L2924/01042H01L2224/8122H01L2224/7565H01L2224/75303H01L24/75H01L2224/7526H01L2924/00014H01L2924/01032H01L21/02H01L21/68
Inventor 秋山直树杉山雅彦中村充一
Owner TOKYO ELECTRON LTD
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