Method for preparing carbon-based thin film material with light soft metal surface
A technology of thin film materials and soft metals, applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as failure, poor bonding force and bearing capacity, large residual stress, etc., and achieve excellent bearing capacity and The effects of tribological properties, good bonding strength, and simple preparation process
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Embodiment 1
[0021] A. Sample pretreatment: The polished titanium alloy and aluminum substrate samples were ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 10 minutes, and then dried with nitrogen and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity argon until the pressure is 3.0Pa. Turn on the pulse bias power supply, adjust the voltage value to -200V, and perform argon plasma bombardment cleaning for 10 minutes.
[0022] B. Deposition gradient transition layer: adjust the flow rate of argon to maintain the chamber pressure at 2.5×10 -1 Pa, turn on the titanium target sputtering power supply and pulse bias power supply, adjust the titanium target sputtering current to 6.0A, and the pulse bias voltage to -400V. After the transition layer thickness reaches 300nm, turn on the graphite target sputtering power supply, and increase the graphite target linearly sputtering current while reducing t...
Embodiment 2
[0025] A. Sample pretreatment: The polished titanium alloy and aluminum substrate samples were ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 10 minutes, and then dried with nitrogen and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity argon until the pressure is 1.0Pa. Turn on the pulse bias power supply, adjust the voltage value to -1000V, and carry out argon plasma bombardment cleaning for 10 minutes.
[0026] B. Deposition gradient transition layer: adjust the flow of argon gas to maintain the chamber pressure at 0.6Pa, turn on the titanium target sputtering power supply and pulse bias power supply, adjust the titanium target sputtering current to 2.0A, and the pulse bias voltage to -600V, After the thickness of the transition layer reaches 200nm, turn on the sputtering power of the graphite target, linearly increase the sputtering current of the graphite target, and decreas...
Embodiment 3
[0028] A. Sample pretreatment: The polished titanium alloy and aluminum substrate samples were ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 10 minutes, and then dried with nitrogen and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity argon until the pressure is 0.5Pa. Turn on the pulse bias power supply, adjust the voltage value to -600V, and perform argon plasma bombardment cleaning for 30 minutes.
[0029] B. Deposition gradient transition layer: adjust the flow of argon gas to maintain the chamber pressure at 0.3Pa, turn on the titanium target sputtering power supply and pulse bias power supply, adjust the titanium target sputtering current to 8.0A, and the pulse bias voltage to -100V, After the thickness of the transition layer reaches 500nm, turn on the sputtering power of the graphite target, increase the sputtering current of the graphite target linearly, and decrease t...
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