Power device with high-voltage radio-frequency lateral diffusion structure and production method of power device
A power device and diffusion structure technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of gate oxide layer quality degradation, high resistivity of tungsten silicon, poor reliability, etc., to avoid source and the effect of drain shorting
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0057] The present invention will be further described below in conjunction with specific embodiment and accompanying drawing, set forth more details in the following description so as to fully understand the present invention, but the present invention can be implemented in many other modes different from this description obviously, Those skilled in the art can make similar promotions and deductions based on actual application situations without violating the connotation of the present invention, so the content of this specific embodiment should not limit the protection scope of the present invention.
[0058] figure 1 It is a flowchart of a method for manufacturing a power device with a high-voltage radio frequency lateral diffusion structure according to an embodiment of the present invention. like figure 1 As shown, the manufacturing method may include:
[0059] Executing step S101, providing a P-type silicon substrate on which a P-type epitaxial layer is formed;
[0060]...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com