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Pixel structure and method for manufacturing pixel structure

A pixel structure and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problems of increasing storage capacitors, display aperture ratio limitations, and difficulty in taking into account high-quality display aperture ratios, etc., and achieves a simple manufacturing method , The effect of high display aperture ratio

Active Publication Date: 2012-05-02
AU OPTRONICS (KUNSHAN) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to increase the capacitance value of the storage capacitor it is necessary to increase the area of ​​the capacitor electrode
Generally speaking, the capacitive electrodes are made of opaque conductive materials such as metals. The increase in the area of ​​the capacitive electrodes means that the increase in the opaque area means that the aperture ratio of the pixel structure will be reduced.
In addition, in the pixel structure, there is no other conductive element between the pixel electrode and the data line, so that the coupling effect between the pixel electrode and the data line affects the display quality of the pixel structure
Therefore, a certain distance must be required between the pixel electrode and the data line, which further limits the display aperture ratio.
Therefore, the current pixel structure is difficult to balance high image quality and ideal display aperture ratio

Method used

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  • Pixel structure and method for manufacturing pixel structure
  • Pixel structure and method for manufacturing pixel structure
  • Pixel structure and method for manufacturing pixel structure

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Embodiment Construction

[0059] Figure 1A Shown is a schematic top view of the first photomask manufacturing process in a method for manufacturing a pixel structure according to an embodiment of the present invention, and Figure 1B versus Figure 1C Respectively along Figure 1A The section line I-I' and the section line II-II' show the section. Please also refer to Figure 1A , 1B versus Figure 1C The manufacturing method of this embodiment is, for example, first forming a channel layer 110 on the substrate 10. The channel layer 110 can be manufactured using a first photomask manufacturing process. That is, the specific implementation of this step is, for example, first performing deposition manufacturing processes such as physical vapor deposition, chemical vapor deposition, and sputtering to form an entire layer of semiconductor material on the substrate 10. Next, a lithographic etching manufacturing process is performed through a first photomask (not shown) to pattern the entire layer of semiconduc...

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Abstract

The invention provides a pixel structure and a method for manufacturing the same. The pixel structure comprises a channel layer, a first patterned metal layer, a first insulating layer, a second patterned metal layer, a second insulating layer and a pixel electrode, which are sequentially formed. The first patterned metal layer comprises a data line, a source electrode and a drain electrode. The first insulating layer is provided with a first opening so as to expose the drain electrode. The second patterned metal layer comprises a scan line and a capacitor electrode. The capacitor electrode comprises a first part overlapped with the data line. The second insulating layer is provided with a second opening communicated with the first opening so as to expose the drain electrode. The pixel electrode is connected with the drain electrode through the second opening and the first opening and is at least overlapped with the first part of the capacitor electrode.

Description

Technical field [0001] The present invention relates to a pixel structure and a manufacturing method of a pixel structure, and particularly to a pixel structure and a manufacturing method of a pixel structure with a high aperture ratio and a simple manufacturing method. Background technique [0002] Generally speaking, the pixel structure of a liquid crystal display includes active elements and pixel electrodes. The active element is used as the switching element of the liquid crystal display unit. In order to control the individual pixel structure, a specific pixel is usually selected through corresponding scan lines and data lines, and an appropriate operating voltage is provided to display the display data corresponding to the pixel. In addition, the pixel structure also includes a storage capacitor, so that the pixel structure has a voltage retention function. That is, the storage capacitor can store the above applied operating voltage to maintain the stability of the displ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1362G02F1/1368G02F1/1333H01L27/02H01L21/77
CPCH01L27/02H01L21/77G02F1/1333G02F1/1362H01L27/1225G02F1/136213H01L27/1255G02F2001/13685G02F1/1368G02F1/13685
Inventor 黄章祐陈培铭
Owner AU OPTRONICS (KUNSHAN) CO LTD
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