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Method for growing large-area graphene by utilizing multi-benzene-ring carbon source low-temperature chemical vapor deposition

A chemical vapor deposition, graphene technology, applied in graphene, nanotechnology for materials and surface science, gaseous chemical plating, etc. The effect of reduced consumption, fewer defects, good crystallinity

Inactive Publication Date: 2013-07-10
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the deficiencies in the prior art above, and provide a method for growing large-area graphene by low-temperature chemical vapor deposition of polyphenylene ring carbon sources, so as to solve the problems of small area and poor crystal quality of graphene prepared in the prior art , technical problems with many defects

Method used

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  • Method for growing large-area graphene by utilizing multi-benzene-ring carbon source low-temperature chemical vapor deposition
  • Method for growing large-area graphene by utilizing multi-benzene-ring carbon source low-temperature chemical vapor deposition
  • Method for growing large-area graphene by utilizing multi-benzene-ring carbon source low-temperature chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Example 1: Low-temperature growth of large-area single-layer graphene from benzene liquid carbon source

[0064] (1) Copper foil is used as the substrate, and the surface of the copper substrate is treated by mechanical polishing and electrochemical polishing successively to make the surface roughness below 50nm. The mechanical polishing speed is 800 rpm. The electrochemical workstation is used as the polishing power supply, the Ag / AgCl electrode is selected as the reference electrode, and the 85% phosphoric acid and polyethylene glycol mixture with a volume ratio of 3:1 is used as the electrochemical polishing solution; the copper foil to be polished is placed For the positive electrode, a copper sheet is used as the negative electrode; the electrochemical polishing voltage is 1-2V, and the polishing time is 1800s.

[0065] (2) After the electrochemical polishing, the copper foil was ultrasonically cleaned with acetone for 10 minutes, then ultrasonically cleaned with ...

Embodiment 2

[0072] Embodiment 2: Change the benzene liquid carbon source in embodiment 1 to 15 mg of naphthalene solid carbon source. The heating temperature of the naphthalene solid source during the graphene growth process is 80-120° C., and other processes are the same as in Example 1.

[0073] Example result: Figure 4 It is the Raman diagram of the graphene prepared under the condition of 600°C. The Raman test shows that the graphene has good crystallinity, and the peak intensity ratio of the 2D peak and the G peak is I 2D / I G is 1.9, and the D defect peak is very small; the crystallization properties of graphene prepared at 500°C and 700°C are basically the same. Figure 7It is the light transmittance test chart of graphene prepared under the condition of 600°C, indicating that the transmittance of graphene obtained by using naphthalene as a solid carbon source reaches 96.7%, which is a single-layer graphene; prepared under the conditions of 500°C and 700°C The transmittance of ...

Embodiment 3

[0074] Example 3: Change the benzene liquid carbon source in Example 1 to 15 mg of phenanthrene solid carbon source. The heating temperature of the phenanthrene solid source during the growth of graphene is 100-150° C., and other processes are the same as in Example 1.

[0075] Example result: Figure 4 It is the Raman diagram of the graphene prepared under the condition of 600°C. The Raman test shows that the graphene has good crystallinity, and the peak intensity ratio of the 2D peak and the G peak is I 2D / I G is 1.65, and the D defect peak is very small; the crystallization properties of graphene prepared at 500°C and 700°C are basically the same. Figure 8 It is the light transmittance test chart of graphene prepared at 600°C, indicating that the transmittance of graphene obtained by using phenanthrene as a solid carbon source reaches 96.5%, which is a single-layer graphene; prepared at 500°C and 700°C The transmittance of the obtained graphene is basically the same. ...

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Abstract

Disclosed is a preparation method for using a carbon source having multiple benzene rings to grow graphene over a large area by chemical vapor deposition at a low temperature. The method comprises: using an aromatic hydrocarbon having multiple benzene rings as a carbon source, growing graphene on the surface of a copper foil by a carbon source decomposition process or a carbon source spin-coating process; and the aromatic hydrocarbon having multiple benzene rings being benzene or a fused-ring aromatic hydrocarbon.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for growing large-area graphene by low-temperature chemical vapor deposition of polyphenylene ring carbon sources. Background technique [0002] Graphene is a single layer of atomically thick graphite with a two-dimensional honeycomb network structure. Due to the existence of π orbitals in the graphene sheet plane, electrons can move freely in the crystal, which makes graphene have very excellent electron transport properties. Due to its excellent mechanical, thermal, electrical and magnetic properties, graphene is expected to be widely used in high-performance nanoelectronic devices, composite materials, field emission materials, gas sensors, energy storage and other fields. Graphene is structurally malleable, and its electrical, optical, and acoustic properties can be drastically tuned through stress and deformation. It is even possible to alter the bandwidth struct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C16/52C23C16/02
CPCC23C16/26B05D1/005C23C16/02C23C16/52C01B31/0453B82Y30/00B82Y40/00C01B32/186
Inventor 谢晓明沈鸿烈吴天如丁古巧孙雷唐述杰江绵恒
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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