Multi-deposition-chamber CVI (chemical vapor infiltration) device for compacting carbon/carbon crucible and method using same

Abstract

The invention discloses a multi-deposition-chamber CVI (chemical vapor infiltration) device for compacting a carbon / carbon crucible and a method using the same. The device comprises a chemical vapor deposition furnace consisting of an outer furnace tank and an inner furnace tank and also comprises multiple layers of graphite partition plates which are distributed in the inner furnace tank from bottom to top and multiple intake tubes which are inserted in the inner furnace tank from bottom to top; adjacent two layers of graphite partition plates are isolated by multiple graphite shores; the upper part of the graphite partition plate arranged on the most-top layer is provided with a gas-sealing plate; dependant deposition chambers are respectively formed between adjacent two layers of graphite partition plates and between the gas-sealing plate and the graphite partition plate arranged on the most-top layer; multiple deposition chambers are distributed from top to bottom; and the multiple intake tubes are respectively inserted into the multiple deposition chambers from bottom to top. The compacting method comprises the following steps: 1, charging of a crucible prefabricated body; and 2, compacting treatment. The device disclosed by the invention has simple structure, reasonable design, good use effect, good compacting effect, good density uniformity, large charging amount and the like, is convenient for assembling and easy to use and operate.

Description

technical field [0001] The invention belongs to the technical field of preparing carbon / carbon crucible materials for single crystal silicon furnaces, and in particular relates to a device and method for a CVI dense carbon / carbon crucible with multiple deposition chambers. Background technique [0002] When the monocrystalline silicon furnace draws monocrystalline silicon rods, the quartz crucible containing polycrystalline silicon blocks and other raw materials is placed in the graphite crucible on the bottom of the crucible, heated and melted in a vacuum, and after the process temperature is adjusted, the seed crystal passes through the guide tube. Inserted into the molten polysilicon liquid, the seed crystal and the graphite crucible are counter-rotated and lifted upwards, so that the polysilicon liquid crystallizes and solidifies into a single crystal silicon rod according to the order of the silicon atoms of the seed crystal. During the drawing process of single crystal...

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Problems solved by technology

[0005] The carbon / charcoal crucible preparation process disclosed in the above two patent application documents all has the following disadvantages and deficiencies: first, the amount of furnace loading is small, the equipment capacity is low, and the production efficiency is low; The height can reach 2400mm~4800mm, and the air can only be fed from the bottom of the furnace. First, it contacts with the first layer of crucible prefabricated body, and pyrolysis carbon deposition reaction occurs. There are many products with large molecular weight in the residual gas, and the deposition effect is poor. The difference is very large, up to more than double; third, the flow rate of propylene or natural gas carbon source gas is small, the weight gain is small, and the compaction efficiency is low

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