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Epitaxial wafer for light emitting diode

A technology for light-emitting diodes and epitaxial wafers, which is used in coatings, gaseous chemical plating, semiconductor devices, etc., can solve problems such as inability to apply long-wavelength technology, and achieve the effects of suppressing defects, high output power, and high efficiency

Inactive Publication Date: 2012-04-18
RESONAC HOLDINGS CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the quantum effect obtained by using the quantum well structure shortens the emission wavelength, there is a problem that it cannot be applied to the long-wavelength technology (for example, refer to Patent Document 6).

Method used

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  • Epitaxial wafer for light emitting diode
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  • Epitaxial wafer for light emitting diode

Examples

Experimental program
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Effect test

Embodiment 1

[0105] For the light-emitting diode of Example 1, first, epitaxial growth layers were sequentially stacked on a semiconductor substrate made of Si-doped n-type GaAs single crystal to produce an epitaxial wafer. GaAs substrate, the plane inclined 15° from the (100) plane to the (0-1-1) direction is used as the growth plane, and the carrier concentration is 2×10 18 cm -3 . The so-called epitaxial growth layer is a buffer layer made of Si-doped n-type GaAs, Si-doped n-type (Al 0.5 Ga 0.5 ) 0.5 In 0.5 Low resistance layer composed of P, n-type Al doped with Si 0.5 In 0.5 The lower cladding layer composed of P, undoped Ga 0.44 In 0.56 P / (Al 0.53 Ga 0.47 ) 0.5 In 0.5 Strained light-emitting layer / barrier layer composed of P pairs, p-type Al doped with Mg 0.5 In 0.5 The upper cladding layer composed of P, (Al 0.6 Ga 0.4 ) 0.5 In 0.5 An intermediate layer of a thin film made of P, and a strain adjustment layer made of p-type GaP doped with Mg.

[0106] In this embod...

Embodiment 2

[0116] The light-emitting diode of Example 2 is a light-emitting diode in which only the structures of the strained light-emitting layer and the barrier layer of the light-emitting diode of Example 1 are changed. Here, in the light-emitting diode of Example 2, the strained light-emitting layer of Example 1 above is changed to undoped Ga with a layer thickness of about 10 nm. 0.42 In 0.58 P, change the barrier layer of the above-mentioned embodiment 1 into non-doped (Al 0.53 Ga 0.47 ) 0.5 In 0.5 P, 20 pairs of strained light-emitting layers and barrier layers are stacked alternately.

[0117] Table 1 shows the results of evaluating the characteristics and uniformity of the light-emitting diode lamp equipped with the light-emitting diode of Example 2. As shown in Table 1, when a current was passed between the n-type and p-type ohmic electrodes, red light with a peak wavelength of 660.5 nm was emitted. In addition, the forward voltage (Vf) when a current of 20 milliamps (mA...

Embodiment 3

[0119] The light emitting diode of Example 3 is a light emitting diode in which only the configuration of the strained light emitting layer of the light emitting diode of Example 2 is changed. Here, in the light-emitting diode of Example 3, the strained light-emitting layer of Example 2 above is changed to undoped Ga with a layer thickness of about 15 nm. 0.41 In 0.49 p.

[0120] Table 1 shows the results of evaluating the characteristics and uniformity of the light-emitting diode lamp equipped with the light-emitting diode of Example 3. As shown in Table 1, as a result of flowing current between the n-type and p-type ohmic electrodes, red light with a peak wavelength of 668.0 nm was emitted. In addition, the forward voltage (Vf) when a current of 20 milliamps (mA) flows forward is about 2.0 volts (V). In addition, the light emission output at a forward current of 20 mA was 3.7 mW. The variation in the peak wavelength of all the light-emitting diode lamps assembled was 2.2...

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Abstract

Disclosed is an epitaxial wafer for a light emitting diode, which is characterized by comprising a GaAs substrate, a light emitting unit that is formed on the GaAs substrate and a strain-adjusting layer that is formed on the light emitting unit. The epitaxial wafer for a light emitting diode is also characterized in that the light emitting unit comprises a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y each represents a number satisfying 0 = X = 0.1 and 0.39 = Y = 0.45), and that the strain-adjusting layer is transparent to the emission wavelength and has a lattice constant smaller than the lattice constant of the GaAs substrate. The epitaxial wafer enables mass production of a high output and / or high efficiency LED having an emission wavelength of not less than 655 nm.

Description

technical field [0001] The present invention relates to an epitaxial wafer (epitaxial growth sheet; epitaxial wafer) for a light-emitting diode, and particularly relates to an epitaxial wafer for a high-output light-emitting diode. [0002] This application claims priority based on Patent Application No. 2009-056779 for which it applied in Japan on March 10, 2009, The content is used here for this application. Background technique [0003] In recent years, the cultivation of plants using artificial light sources has been studied. In particular, cultivation methods using lighting using light-emitting diodes (LEDs) that are excellent in monochromaticity, energy-saving, long-lived, and can be miniaturized are attracting attention. In addition, from the current research results, the effect of red light in the wavelength range of 600 to 700 nm has been confirmed as one of light emission wavelengths suitable for plant cultivation (photosynthesis). In particular, light with a wav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/30C23C16/30H01L21/265
CPCH01L33/12H01L33/30H01L33/02H01L33/04
Inventor 濑尾则善松村笃竹内良一
Owner RESONAC HOLDINGS CORPORATION
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