Gallium nitride based light emitting diode and manufacturing method thereof

Abstract

The invention discloses a gallium nitride based light emitting diode and a manufacturing method thereof. In the invention, a double-layer transparent conducting layer structure is designed, a first transparent extension layer is formed on a p type semiconductor layer, a p electrode is provided at a center area of an epitaxial structure layer, peripheral of the p electrode is provided with a hole structure, and a second transparent extension layer is formed in the hole structure and is connected with an n electrode to form an equipotential surface. After current is injected from the p electrode, the current diffuses to a whole light emitting surface through the first transparent extension layer and flows to an n type layer through the p type semiconductor layer, and since the second transparent extension layer and the n electrode are in a same electric potential, the current diffuses to the second transparent extension layer to reach the n electrode finally. According to the gallium nitride based light emitting diode and the manufacturing method, in a process that the current flows to the n electrode from the p electrode, the current is uniformly distributed on an epitaxial luminescent layer, a current flow through path of a P layer is shorter, simultaneously, structure of partial light emitting surface is changed, and luminescence efficiency is effectively raised.

Description

technical field [0001] The invention relates to a gallium nitride-based light-emitting diode and a manufacturing method thereof, in particular to a gallium-nitride-based light-emitting diode with double transparent current spreading layers and a manufacturing method thereof. Background technique [0002] In recent years, the development of semiconductor lighting technology represented by gallium nitride-based wide-bandgap semiconductor materials has attracted worldwide attention. With the continuous improvement of epitaxy and chip process technology, the luminous efficiency of gallium nitride-based light-emitting diodes has been continuously improved. However, in order to popularize semiconductor lighting in a real sense, it still needs to continue to improve on the existing level of light efficiency. The light efficiency of light-emitting diodes mainly depends on the internal quantum efficiency and light extraction efficiency. The former is determined by the epitaxial crys...

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Problems solved by technology

Since the electrode has only a small part of the contact with the epitaxial light-emitting stack, the current is easily confined to the area of ​​the contacted part, causing the current to flow from the electrode into the active layer in the epitaxial light-emitting stack, only concentrated at the position directly below the electrode, As a result, the distribution in the horizontal direction is not uniform, and the light emitting area of ​​the active layer cannot be fully utilized, which affects the light extraction efficiency of the light emitting diode.

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