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Preparation method of three-dimensional TiO2 crystal film

A crystal film, three-dimensional technology, applied in the field of preparation of three-dimensional TiO2 crystal film, can solve the problems of dense film, difficulty in obtaining regular shape, single crystal size, large free path of particles, etc., and achieve simple equipment, low price and low pollution Effect

Inactive Publication Date: 2012-04-18
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, most plasma chemical vapor deposition technologies are carried out under low pressure, the free path of particles is large, and the formed thin film is dense, so it is difficult to obtain single crystal with regular shape and large size.

Method used

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  • Preparation method of three-dimensional TiO2 crystal film
  • Preparation method of three-dimensional TiO2 crystal film
  • Preparation method of three-dimensional TiO2 crystal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Such as figure 1 As shown, it is a schematic structural diagram of a capacitively coupled coaxial plasma reactor, and the capacitively coupled coaxial plasma reactor includes a coaxial inner tube 2 of a barrier medium and an outer tube 4 of a barrier medium; the barrier medium is quartz, and the inner tube of the barrier medium Both the tube 2 and the barrier medium outer tube 4 have a thickness of 1 mm. The lower end of the barrier medium inner tube 2 is closed and the upper end is open, and conductive powder copper powder is housed inside, and the outer diameter of the barrier medium inner tube 2 is 7mm. The inner diameter of the barrier medium outer tube 4 is 11 mm, the discharge gap of the dielectric barrier discharge plasma reactor is 2.5 mm, and the right end of the barrier medium outer tube 4 is open. Air inlets 3 with a diameter of 2 mm are respectively provided on the sides of the upper part of the barrier medium outer tube 4 . A metal sheet 5 (copper sheet) ...

Embodiment 2

[0045] Such as figure 1 As shown, it is a schematic structural diagram of a capacitively coupled coaxial plasma reactor, and the capacitively coupled coaxial plasma reactor includes a coaxial inner tube 2 of a barrier medium and an outer tube 4 of a barrier medium; the barrier medium is quartz, and the inner tube of the barrier medium Both the tube 2 and the barrier medium outer tube 4 have a thickness of 2 mm. The lower end of the barrier medium inner tube 2 is closed and the upper end is open, and conductive powder copper powder is housed inside, and the outer diameter of the barrier medium inner tube 2 is 5mm. The inner diameter of the barrier medium outer tube 4 is 15 mm, the discharge gap of the dielectric barrier discharge plasma reactor is 5 mm, and the right end of the barrier medium outer tube 4 is open. Air inlets 3 with a diameter of 5 mm are respectively provided on the sides of the upper part of the barrier medium outer tube 4 . A metal sheet 5 (copper sheet) wi...

Embodiment 3

[0050] Such as figure 1 As shown, it is a schematic structural diagram of a capacitively coupled coaxial plasma reactor, and the capacitively coupled coaxial plasma reactor includes a coaxial inner tube 2 of a barrier medium and an outer tube 4 of a barrier medium; the barrier medium is quartz, and the inner tube of the barrier medium Both the tube 2 and the barrier medium outer tube 4 have a thickness of 1.5 mm. The lower end of the barrier medium inner tube 2 is closed and the upper end is open, and conductive powder copper powder is housed inside, and the outer diameter of the barrier medium inner tube 2 is 6 mm. The inner diameter of the barrier medium outer tube 4 is 12 mm, the discharge gap of the dielectric barrier discharge plasma reactor is 3 mm, and the right end of the barrier medium outer tube 4 is open. Air inlets 3 with a diameter of 2 mm are respectively provided on the sides of the upper part of the barrier medium outer tube 4 . A metal sheet 5 (copper sheet)...

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Abstract

The invention provides a preparation method of a three-dimensional TiO2 crystal film. The method comprises steps of: letting discharge gas in medium block discharge plasma reactor by employing a normal pressure low temperature radio frequency medium block glow discharge method; the discharge gas discharging to generate plasma jet by radio frequency alternating current; sending a precursor and carrying gas to a plasma zone to carry out reaction and precipitate on a substrate, so as to obtain the three-dimensional TiO2 crystal film. The method is characterized in that the precipitate is inner glow precipitate. The TiO2 obtained by the invention has a large proportion of {001} active surface and a unique three-dimensional structure forming by intersecting growth of a {101} surface, a {001} surface and a {101} surface; and the titanium dioxide film irradiates strong visible fluorescence by excitation of laser of 325 nm wavelength at room temperature.

Description

technical field [0001] The invention relates to a three-dimensional TiO 2 The preparation method of crystal film, specifically relates to a kind of atmospheric pressure low-temperature radio frequency glow plasma chemical vapor deposition to prepare high reactivity three-dimensional TiO 2 The method for a crystal film belongs to the technical field of thin film materials. Background technique [0002] TiO 2 It is an excellent semiconductor photocatalytic material. The material has the advantages of good chemical stability, non-toxicity, and strong oxidation under light induction. It has shown good application prospects in energy and environment, and has been used in water splitting and dye-sensitized solar cells (DSSCs). ) aspect has been applied. in TiO 2 The following reactions exist in the process of cracking water to produce hydrogen: [0003] (TiO 2 electrode) (1) [0004] (counter electrode) (2) [0005] (counter electrode) (3) [0006] (total respo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/505C23C16/40
Inventor 王德信张菁石建军郭颖丁可
Owner DONGHUA UNIV
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