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Numerical control body bias type C inverter

An inverter-like, body-biased technology, used in pulse generation, electrical components, and components of circuits that generate electrical pulses, etc., can solve problems such as process and temperature sensitivity, body modulation potential error, and inability to achieve optimal compensation.

Inactive Publication Date: 2013-11-27
ZHEJIANG UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

However, the problem with the above-mentioned gain bootstrap type C-type inverter is that both the PMOS bulk potential modulation module and the NMOS bulk potential modulation module use resistors for current-voltage conversion, and the converted voltage is the final bulk modulation potential, while In the actual integrated circuit manufacturing, the resistance itself is more sensitive to the process and temperature, resulting in a certain error in the volume modulation potential generated by it, so the gain bootstrap C-type inverter cannot compensate for the process, power supply voltage and temperature. achieve the best results

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  • Numerical control body bias type C inverter
  • Numerical control body bias type C inverter
  • Numerical control body bias type C inverter

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Embodiment Construction

[0032] The present invention will be described in detail below in conjunction with the embodiments and accompanying drawings, but the present invention is not limited thereto.

[0033] A digitally controlled body bias type C-type inverter, its circuit structure diagram is attached image 3 As shown, it includes a main class C inverter module 31 , a numerically controlled PMOS volume modulation module 32 and a numerically controlled NMOS volume modulation module 33 .

[0034]The main body type C inverter module 31 is composed of a first PMOS transistor M1, a first NMOS transistor M2, a second PMOS transistor M3 and a second NMOS transistor M4; wherein, the gate terminal of the first PMOS transistor M1 is connected to the first NMOS transistor M2 connected to the gate terminal of the main C-type inverter module 31 as the input terminal IN of the main C-type inverter module 31; the drain terminal of the second PMOS transistor M3 is connected to the drain terminal of the second NM...

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Abstract

The invention discloses a numerical control body bias type C inverter, comprising a main body C inverter module, a numerical control PMOS(P-channel Metal Oxide Semiconductor) body modulating module and a numerical control NMOS(N-channel Metal Oxide Semiconductor) body modulating module, wherein through the links of parameter induction, current comparison, digital control, body bias generation, feedback and the like, the numerical control PMOS body modulating module and the numerical control NMOS body modulating module can more accurately control the threshold voltage, leakage source current, transconductance and other parameters of a first PMOS FET(Field Effect Transistor) and a first NMOS FET in the main body C inverter module, thus greatly reducing the adverse effects of process deviation, supply voltage disturbance and temperature change on the main body C inverter module. The numerical control body bias type C inverter disclosed by the invention is suitable for a switching capacitance integrator, a Sigma-Delta analog-digital converter and other application situations with very-low power dissipation and high accuracy.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a class C inverter. Background technique [0002] In traditional analog circuit design, the operational amplifier is the main power consumption block. At present, low voltage and low power consumption are the mainstream trend in the development of analog circuit design. Therefore, how to implement an operational amplifier that meets the specification requirements in a low-voltage and low-power consumption environment has become the focus and difficulty of analog circuit design. [0003] It is a new low-voltage low-power circuit design technique to replace the traditional operational amplifier with a class-C inverter. The most basic circuit structure in a class C inverter includes a PMOS (P-Channel Metal Oxide Semiconductor, P-channel Metal Oxide Semiconductor) input transistor and an NMOS (N-Channel Metal Oxide Semiconductor, N-channel Metal Oxide Semico...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K3/01H03K3/353
Inventor 罗豪韩雁张泽松梁国廖璐韩晓霞虞春英
Owner ZHEJIANG UNIV
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