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Substrate, epitaxial wafer and semiconductor device

A substrate and body technology, applied in the fields of substrates, epitaxial wafers and semiconductor devices, can solve problems such as poor flatness, and achieve the effects of reducing subsequent production costs, improving flatness, and improving product quality

Inactive Publication Date: 2012-01-18
SHANGHAI JINGMENG SILICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Epitaxial wafers with thicker epitaxial layers have poor flatness

Method used

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  • Substrate, epitaxial wafer and semiconductor device
  • Substrate, epitaxial wafer and semiconductor device
  • Substrate, epitaxial wafer and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-4

[0041] figure 2 It is a schematic diagram of the substrate structure for epitaxial wafers in Examples 1-4. Such as figure 2 As shown, the substrate includes a substrate body 1, and the substrate body 1 can be N-type, that is, doped with arsenic, phosphorus or antimony; the substrate body 1 can also be P-type, that is, doped with boron element. A first silicon dioxide layer 4 is arranged on the rear side of the substrate body 1 . A polysilicon layer 5 is provided on the surface of the first silicon dioxide layer 4 . The surface of the polysilicon layer 5 is provided with a second silicon dioxide layer 6

[0042] Deposition of silicon dioxide and polysilicon can be achieved by existing technologies.

[0043] Embodiments 1-4 are heavy arsenic-doped substrate bodies, the difference between the two is that in embodiments 1-4, the back of the substrate body is provided with first dioxide Silicon layer: polysilicon layers with thicknesses of 6um, 7.7um, 8.8um, and 9.7um, and ...

Embodiment 5-8

[0045] image 3 It is a schematic diagram of the epitaxial wafer structure in Embodiment 5-8. Such as image 3 As shown, Examples 5-8 use the substrates in Examples 1-4 to grow epitaxial layers respectively. Fabricated epitaxial wafer structures such as image 3 shown, epitaxial wafers, including figure 2 In the shown substrate, an epitaxial layer 3 is grown on the front surface of the substrate body 1 . The substrate includes a substrate body 1 , and a first silicon dioxide layer 4 is provided on the back of the substrate body 1 . The surface of the first silicon dioxide layer 4 is provided with a polysilicon layer 5 . The surface of the polysilicon layer 5 is provided with a second silicon dioxide layer 6 . The epitaxial layer 3 is arranged on the front surface of the substrate body 1 .

[0046] In Comparative Examples 1-4, the first silicon dioxide layer, the polysilicon layer and the second polysilicon layer are not arranged on the backside of the heavy arsenic-dop...

Embodiment 9-12

[0068] Figure 4 It is a schematic diagram of the substrate structure in Examples 9-12. Such as Figure 4 As shown, the substrate includes a substrate body 1 , and a first silicon dioxide layer 4 is provided on the back of the substrate body 1 . The surface of the first silicon dioxide layer 4 is provided with a polysilicon layer 5 . The surface of the polysilicon layer 5 is provided with a second silicon dioxide layer 6 . The substrate body 1 has a monocrystalline silicon layer 2 on the front side. The thickness of the single crystal silicon layer 2 is 2-5 μm. Its specific thickness can be determined according to the overall thickness of the epitaxial wafer and the thickness of the substrate body. The higher the substrate thickness, the thicker the monocrystalline silicon layer. In subsequent production, an epitaxial layer is grown on the surface of the single crystal silicon layer 2 .

[0069] The substrate body 1 can be N-type, that is, doped with arsenic, phosphorus...

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Abstract

The invention discloses a substrate. The substrate comprises a substrate body and is characterized in that a first silicon dioxide layer is arranged at the back side of the substrate body; a polycrystalline silicon layer is arranged on the surface of the first silicon dioxide layer; and a second polycrystalline silicon layer is arranged on the surface of the polycrystalline layer. The invention has another advantage of being capable of improving the flatness of an epitaxial wafer and increasing the resistivity uniformity of an epitaxial layer.

Description

technical field [0001] The invention relates to a substrate, an epitaxial wafer and a semiconductor device. Background technique [0002] For semiconductor devices, the epitaxial layer needs to have a perfect crystal structure, and there are certain requirements for the thickness, conductivity type, resistivity and resistance uniformity of the epitaxial layer. The resistivity of semiconductors generally changes with changes in temperature, doping concentration, magnetic field strength, and light intensity. [0003] The combination of epitaxial layer and substrate and product specifications are determined by the application of subsequent products. Circuits and electronic components need to be fabricated on epitaxial wafers, and different applications such as PMOS, NMOS, CMOS and bipolar in saturation and non-saturation in MOS. With the development trend of integrated circuit design towards lightness, thinness, shortness, smallness and power saving, products such as mobile c...

Claims

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Application Information

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IPC IPC(8): H01L29/36
Inventor 顾昱钟旻远林志鑫陈斌
Owner SHANGHAI JINGMENG SILICON CORP
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