Photoetching method

Abstract

The invention discloses a photoetching method. The method comprises the following steps of: carrying out plasma treatment on the surface of a substrate by adopting the mixed gas of CO2 and H2; rotatably coating photo resistance (PR) on the surface of the substrate to form a photoetching pattern. By adopting the method, photoetching pattern flaking can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a photolithography method. Background technique [0002] With the development of the semiconductor manufacturing process, the area of ​​the semiconductor chip is getting smaller and smaller, so the precision of the semiconductor process becomes more important. In the semiconductor manufacturing process, one of the important processes is photolithography. Photolithography is the process of transferring the pattern on the mask to the photolithography pattern on the wafer. Therefore, the quality of photolithography will directly affect the final formed chip. performance. [0003] Since the main component of the substrate is silicon dioxide (SiO 2 ), wherein silicon ions on the surface of the substrate can combine with the hydroxyl group (-OH) of water molecules in the air, thereby generating compounds with hydroxyl groups on the substrate surface, compounds with hydroxyl...

AI Technical Summary

Problems solved by technology

From the above analysis, it can be seen that the surface of the substrate still has a large number of hydrophilic hydroxyl groups, and the PR after spin coating may still be difficult to adhere to the surface of the substrate well, resulting in peeling off of the photolithographic pattern.

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