Lateral diffusion metal oxide semiconductor assembly

Abstract

The invention discloses a lateral diffusion metal oxide semiconductor assembly. The lateral diffusion metal oxide semiconductor assembly comprises a substrate, a gate dielectric layer, a gate polycrystalline silicon layer, a source region, a drain region, a matrix region, a first drain contact plug, a source polycrystalline silicon layer, an insulating layer and a source metal layer, wherein the source polycrystalline silicon layer arranged on the gate dielectric layer above the drain region is utilized to be served as a field plate so as to advance the breakdown voltage and improve the capacitance between a drain electrode and a source electrode. Besides, the first drain contact plug in the invention can effectively reduce the extended length of an on-resistance and the lateral between the drain electrode and the source electrode, thus the power consumption can be reduced and the assembly integration can be increased.

Description

technical field [0001] The invention relates to a laterally diffused metal oxide semiconductor component, in particular to a laterally diffused metal oxide semiconductor component with improved capacitance characteristics and optimized on-resistance. Background technique [0002] A laterally diffused metal-oxide-semiconductor (LDMOS) device is a common semiconductor power device. Since the laterally diffused metal oxide semiconductor device has a horizontal structure, it is easy to manufacture and easy to integrate with the current semiconductor technology, thereby reducing the manufacturing cost. At the same time, it can withstand high breakdown voltage and has high output power, so it is widely used in components such as power converters, power amplifiers, switches, and rectifiers. [0003] see figure 1 . figure 1 A schematic cross-sectional view of a laterally diffused metal-oxide-semiconductor device in the prior art is shown. Such as figure 1 As shown, the conventi...

AI Technical Summary

Problems solved by technology

However, increasing the lateral extension of the component will not only reduce the integration of the component, but also increase the on-resistance of the component, resulting in power loss

Therefore, in order to improve the shortcomings of the laterally diffused metal oxide semiconductor device, a vertical channel semiconductor device has been developed in the prior art. Although it can reduce the on-resistance, it has a large gap between the gate and the drain. Capacitance (gate-to-drain capacitance, Cgd)

Therefore, when the trench semiconductor device with a vertical structure is applied to a switching device, this characteristic of large capacitance between the gate and the drain will increase the voltage transient time during the switching period and affect the switching power loss

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