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Growth system and method of crystalline hafnium

A technology of crystallization and reactor, which is applied in the field of crystalline hafnium growth system, can solve the problems of restricting the use area, reducing the growth speed, and low efficiency, and achieve the effects of reducing the use of accessories and consumables, accelerating the growth speed, and improving production efficiency

Inactive Publication Date: 2011-12-28
NANJING YOUTIAN METAL TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, the industrialized production technology of crystalline hafnium is technically blocked and monopolized by foreign companies, while the domestic technology has low efficiency and high energy consumption due to insufficient growth capacity of crystalline hafnium in the later stage of production. A few hundred grams, only for laboratory use, and due to the small diameter, it cannot be directly machined, which limits its application field. At the same time, its oxygen content is usually 200-300ppm, resulting in insufficient purity, which also affects the use
Moreover, the existing technology is to add iodine to the glass bottle and vacuumize it to 1.33×10 -1 After Pa, seal it, and then directly hang it in the reactor through the hafnium wire. After the vacuum degree in the reactor reaches the requirement, heat the hafnium wire hanging the glass bottle to make it fuse, and then the glass bottle falls and breaks to release iodine. The method is not only complicated, but also part of the iodine will remain in the broken glass bottle, thus reducing the iodine involved in chemical transport and reducing the growth rate

Method used

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  • Growth system and method of crystalline hafnium
  • Growth system and method of crystalline hafnium

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Embodiment

[0028] Example: Reference figure 1 , the present invention provides an embodiment of a growth system for crystalline hafnium, which includes a power supply unit 1, a reactor 2, a molybdenum shield 3 arranged in the reactor 2, a salt bath furnace 4, and a cooling device for cooling the reactor 2. A cooling unit, a vacuum unit (not shown) for vacuuming the reactor 2, an iodine box 17 controlled by a ball valve 18 for adding iodine to the reactor 2, an electrode unit, and a crystallization unit.

[0029] Power supply unit 1, the voltage of which is steplessly adjustable within the range of 1.0V-180V, and the maximum designed output current is 1400A.

[0030] Reactor 2 is made of 316L stainless steel, with an inner diameter of 420mm and a clear height of 1100mm, and can be put into the salt bath furnace 4 as a whole. There is a bracket 38 for hanging the mother wire 30 in the reactor 2, and an insulating electrical ceramic sheet 36 is fixed on the bracket, and a molybdenum wire 3...

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Abstract

The invention discloses a growth system and method for crystalline hafnium. The system comprises a voltage-adjustable power supply unit, a reactor, a molybdenum shield arranged in the reactor, a salt bath furnace capable of accommodating the reactor, and a counter reactor. A cooling unit for cooling, a vacuum unit for vacuuming the reactor, an iodine box for adding iodine to the reactor and controlled by a ball valve, an electrode unit installed above the reactor and electrically connected to the power supply unit, and installed in the reactor A crystallization unit in the reactor and electrically connected to the electrode unit, and coarse hafnium arranged between the inner wall of the reactor and the molybdenum shield. Compared with the existing method, the growth speed is fast, the reaction time is long, the output of a single furnace is high, the unit energy consumption is low, and the oxygen content is low.

Description

technical field [0001] The invention relates to a growth system and method for crystalline hafnium. Background technique [0002] At present, the industrialized production technology of crystalline hafnium is technically blocked and monopolized by foreign companies, while the domestic technology has low efficiency and high energy consumption due to insufficient growth capacity of crystalline hafnium in the later stage of production. A few hundred grams is only for laboratory use, and due to its small diameter, it cannot be directly machined, which limits its application field. At the same time, its oxygen content is usually 200-300ppm, resulting in insufficient purity, which also affects its use. Moreover, the existing technology is to add iodine to the glass bottle and vacuumize it to 1.33×10 -1 After Pa, seal it, and then directly hang it in the reactor through the hafnium wire. After the vacuum degree in the reactor reaches the requirement, heat the hafnium wire hanging ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B34/14
Inventor 陈怀浩
Owner NANJING YOUTIAN METAL TECH
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