Pixel isolation structure and manufacturing method of pixel isolation structure

Abstract

The invention provides a pixel isolation structure and a manufacturing method of the pixel isolation structure. The pixel isolation structure according to the present invention includes: a substrate, a pixel structure, and an isolation structure, wherein the pixel structure is arranged on the substrate, and the isolation structure is arranged around the pixel structure; and, the isolation structure An oxide layer is arranged in it. Using the pixel isolation structure, when the incident light reaches the isolation structure after a certain distance in the pixel structure, the incident light will enter the isolation structure and reach the interface between the isolation structure and the oxide layer; at this time, as an optically dense medium The refractive index of the isolation structure is different from that of the oxide layer as the optical thinning medium, so that the light reaching the boundary between the isolation structure and the oxide layer is partially reflected back into the pixel structure. If the incident angle θ satisfies certain conditions, the light that reaches the boundary between the isolation structure and the oxide layer is completely reflected back into the pixel structure. Thus, the occurrence of optical crosstalk is reduced, thereby reducing the optical crosstalk from affecting the normal function of the pixel structure.

Description

technical field [0001] The present invention relates to the field of semiconductor device design and manufacture, and more specifically, the present invention relates to a pixel isolation structure and a method for manufacturing the pixel isolation structure. Background technique [0002] In the design and manufacture of semiconductor devices, it is often necessary to manufacture pixel units on silicon wafers. These pixel structures must be effectively isolated from their surrounding devices or regions. [0003] figure 1 A pixel isolation structure according to the prior art is schematically shown. Such as figure 1 As shown, the pixel structure P is arranged on the substrate Sub, and the isolation structure ISO is arranged around the pixel structure P. [0004] However, there is a problem in the above-mentioned pixel isolation structure, that is, if figure 1 As shown, when the incident light IR that enters the pixel structure P through various optical elements reaches t...

AI Technical Summary

Problems solved by technology

However, this technical means cannot solve the above-mentioned optical crosstalk problem

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