A Reverse Diode Trigger SCR for Electrostatic Protection

Abstract

The invention discloses a backward diode-triggered thyristor for electrostatic protection. The backward diode-triggered thyristor consists of an N well resistor, a P well, a P substrate resistor, a backward diode, a first bipolar transistor PNP and a second bipolar transistor NPN, wherein the N well resistor, the P well and the P substrate resistor are arranged on a P substrate; the backward diode consists of an N+ active injection region and the P well; the first bipolar transistor PNP consists of a P+ active injection region, an N well and the P substrate; the second bipolar transistor NPN consists of a second N well, the P substrate and a first N well; the first N well is embedded into the P well; and a first N+ active injection region is arranged in the P well. The backward diode-triggered thyristor for electrostatic protection forms a voltage clamp by utilizing the backward diode, the parasitic well resistor and the parasitic substrate resistor, realizes quick response to electrostatic discharge (ESD) pulses and the pre-enabling of a protective structure, and realizes low voltage triggering and adjustable maintaining voltage to further realize the electrostatic protective structure.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, in particular to a reverse diode trigger thyristor for improving the reliability and static power consumption of an integrated circuit ESD protection device based on a thyristor. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature poses a serious threat to the reliability of integrated circuits. In the industry, 30% of the failures of integrated circuit products are caused by electrostatic discharge, and the increasingly smaller process size and thinner gate oxide thickness greatly increase the probability of integrated circuit damage by electrostatic discharge. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products. [0003] The modes of electrostatic discharge phenomena are usually divided into four types: HBM (Human Body Model), MM (Machine Disc...

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Problems solved by technology

[0005] Because of the short time and high energy of ESD static electricity, it often has an instantaneous impact on the circuit and causes damage to the components in the circuit.

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