Preparation method of non-volatile charge storage device, non-volatile charge storage device and application of device

Abstract

The invention relates to a preparation method of a non-volatile charge storage device, the non-volatile charge storage device and application thereof. The preparation method of the non-volatile charge storage device comprises the following specific steps: a) precipitating Al2O3 on the surface of a substrate by use of an atomic layer chemical vapor deposition method so as to form a tunneling layer; b) precipitating a layer of (HfO2)x(Al2O3)1-x film serving as a storage layer on the surface of the tunneling layer by use of the atomic layer chemical vapor deposition method; and c) precipitating a layer of Al2O3 serving as a barrier layer on the surface of the (HfO2)x(Al2O3)1-x storage layer by use of the chemical vapor deposition method. The non-volatile charge storage device comprises the tunneling layer, the storage layer and the barrier layer which are successively connected; Al2O3 is used as the tunneling layer and barrier layer of the storage device, and (HfO2)x(Al2O3)1-x is used asthe storage layer of the device. By using the method, the writing-in and erasing speeds of the device can be well improved, and simultaneously, the preparation method is simple to operate and easy tocontrol.

Description

technical field [0001] The invention relates to a non-volatile charge storage device, its preparation method and application, and belongs to the field of microelectronic materials. Background technique [0002] For decades, the development of integrated circuits has basically followed the Moore's Law predicted by Dr. Gordon E. Moore, one of the founders of Intel Corporation, in 1964: 12 to 18 months doubles, feature size shrinks times. As the feature size of devices becomes smaller and smaller, traditional floating-gate non-volatile semiconductor memory devices face serious leakage problems. The size of the tunneling layer in the floating gate memory device is continuously reduced, so that a single defect will cause all the charges stored in the polysilicon floating gate to be lost. To solve this difficult problem, polysilicon-oxide-nitride-oxide-silicon (SONOS) type semiconductor memory devices have been extensively studied. However, studies have shown that using nitri...

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Problems solved by technology

However, studies have shown that using nitride (Si 3 N 4 ) as the storage layer of the charge storage device has poor data retention performance, while the traditional SiO 2 The thickness of the tunneling layer and the barrier layer is getting thinner and thinner, and the tunneling current increases rapidly due to the quantum tunneling effect, resulting in SiO 2 The layer cannot play the role of insulating medium, and the leakage current of the device has reached an unbearable level

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