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Photoresist stripper composition

A technology of photoresist and stripping solution, which is applied in the processing of photosensitive materials, etc. It can solve the problems of aggravated substrate corrosion and inability to remove the photoresist film cleanly, and achieves low implementation temperature, excellent stripping effect, short time effect

Inactive Publication Date: 2014-09-03
西安东旺精细化学有限公司
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Problems solved by technology

[0003] The invention provides a photoresist stripping solution composition, which is especially suitable for stripping a photoresist film with a thickness of more than 100 μm on a package substrate, so as to overcome the inability of the prior art stripping method to completely remove the photoresist Technical problems such as clean removal of the coating film and easy aggravation of substrate corrosion

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Embodiment Construction

[0031] The photoresist stripper composition of the present invention is a composition containing an inorganic base, at least one of ammonia water and ammonium salt, a corrosion inhibitor, and water.

[0032] The inorganic base described in the present invention includes one or two of sodium hydroxide, potassium hydroxide and lithium hydroxide. The content of the inorganic base is 1wt%-25wt%, preferably 5-20wt%, more preferably 8-15wt%. When the concentration is less than 1wt%, the effect of effectively stripping the photoresist film cannot be achieved; greater than 25wt% , it will aggravate the corrosion of the base material.

[0033] The ammonia water or / and the ammonium salt described in the present invention act synergistically to strip the photoresist film. The ammonium salt is selected from ammonium sulfate, ammonium bisulfate, ammonium sulfite, ammonium bisulfite, ammonium nitrate, ammonium carbonate, ammonium bicarbonate, ammonium chloride, ammonium bromide, ammonium f...

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Abstract

The invention provides a photoresist stripper composition, which comprises an inorganic base, an ammonium salt, an anticorrosive agent and water. A stripper provided by the invention is particularly applied to the stripping of thick dry films with the thicknesses of greater than 100 mu m, can completely strip the thick dry films under the conditions of relatively lower temperature of 40 to 50 DEG C and relatively shorter time of shorter than 30 min, is low in cost and environmentally friendly, can be used under simple conditions and does not contain any volatile organic compound.

Description

technical field [0001] The invention relates to a photoresist stripping liquid composition, which is especially suitable for stripping a photoresist film with a thickness of more than 100 μm on a packaging substrate, and is also suitable for stripping a photoresist film such as a PCB . Background technique [0002] In the process of PCB, FPC, TFT, and LCD, the transfer of circuit patterns is a necessary step. The use of photoresist plays a vital role in achieving line pattern transfer. After the "imaging" is completed, whether the photoresist film can be successfully and completely removed directly affects the subsequent processes such as etching. Commonly used photoresist films have thicknesses of 30 μm and 40 μm. A photoresist film with a thickness of 100u and 120μm is also used in the packaging substrate manufacturing process. For the stripping of the thin dry film, Chinese patent CN1428659A proposes a composition of quaternary ammonium hydroxide, water-soluble amine,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
Inventor 张军常积东李承孝
Owner 西安东旺精细化学有限公司
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