Semiconductor structure and manufacturing method thereof

Abstract

The invention provides a semiconductor structure and a manufacturing method thereof, relating to the field of semiconductor manufacturing. The semiconductor structure comprises a silicon substrate, a wide band gap semiconductor layer formed on the silicon substrate and a silicon layer formed on the wide band gap semiconductor layer. The method comprises the steps of growing the wide band gap semiconductor layer on the silicon substrate and growing the silicon layer on the wide band gap semiconductor layer. The embodiment of the invention can be applied to manufacturing of semiconductor devices.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] A general trend in modern integrated circuit fabrication is to produce semiconductor devices, such as memory cells, of ever smaller dimensions. [0003] Although fabrication of transistors at the nanometer scale allows the integration of more transistors on a single wafer, thereby enabling the formation of larger circuitry in a smaller area, the continuous shrinking of transistor dimensions leads to a decrease in channel length, causing increasingly Severe short channel effect (SCE) occurs. [0004] Ultra-thin silicon-on-insulator (UTSOI) is a typical technology for suppressing short-channel effects. Such as figure 1 As shown, in the silicon-on-insulator structure 100, there is a layer of silicon dioxide 102 as an insulating layer between the silicon substrate 101 and the top la...

AI Technical Summary

Problems solved by technology

The manufacture of ultra-thin silicon-on-insulator by wafer bonding technology requires high process requirements, and it is easy to cause lattice defects on the contact surface during wafer bonding, resulting in low yield

In addition, because it is difficult to control the thickness of the ultra-thin silicon layer, the uniformity of the top layer silicon 103 on the buried oxide layer is poor

Images