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Isopycnic cutting slurry for linear cutting of solar wafer and manufacturing method thereof

A technology for solar silicon wafer and wire cutting, applied in the direction of lubricating composition, etc., can solve the problems of increased cost, control and unfavorable product quality of enterprises, and achieve the effect of reducing cutting cost and controlling the environment of auxiliary materials.

Inactive Publication Date: 2012-12-12
浙江德圣龙窗帘有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In solar silicon wafer wire cutting, nearly 40% of the silicon material is cut into micropowder and enters the circulating mortar system with the cutting mortar, and a large amount of micropowder adheres to the surface of silicon carbide and participates in cutting with the mortar, resulting in an increase in the density and viscosity of the mortar , which affects the mortar cutting ability and decreases with the increase of cutting time, causing enterprises to increase the amount of mortar replacement to compensate
At the same time, changes in the cutting accessories environment are not conducive to the company's control of product quality, resulting in an increase in corporate costs. In order to meet future market demand and price competition and development needs, the entire industry is constantly working on how to control the accessories environment and reduce cutting costs. find new ways

Method used

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  • Isopycnic cutting slurry for linear cutting of solar wafer and manufacturing method thereof
  • Isopycnic cutting slurry for linear cutting of solar wafer and manufacturing method thereof
  • Isopycnic cutting slurry for linear cutting of solar wafer and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] 1. The weight composition of equal density cutting mortar:

[0031]

[0032] 2. Manufacturing method of equal density cutting mortar:

[0033] a. Weigh 3 / 4 of the total amount of polyethylene glycol to dissolve N-methylolacrylamide and acrylamide, and add N-methylolacrylamide and acrylamide to the polyethylene glycol while stirring, so that its full dissolution;

[0034] b. take acrylic acid and dissolve 4 / 5 of the total amount of the initiator into it;

[0035] c. Mix the above two solutions evenly, weigh half of the total amount of the mixed solution and add it to the copolymerization device, heat and start the stirrer, and condense the reflux system. Timing, under the condition of maintaining the reflux temperature of 75 ℃ ~ 80 ℃, it takes 3.5 hours to add 1 / 2 of the silicon carbide particles with the feeding device under the condition of sufficient stirring;

[0036] d. After 3.5 hours under the condition of maintaining the reflux temperature of 75°C to 80°C, ...

Embodiment 2

[0040] 1. The weight composition of equal density cutting mortar:

[0041]

[0042] 2. Manufacturing method of equal density cutting mortar:

[0043] a. Weigh 3 / 4 of the total amount of polyethylene glycol to dissolve N-methylolacrylamide, methyl methacrylate and butyl acrylate, the same as in Example 1 below.

Embodiment 3

[0045] 1. The weight composition of equal density cutting mortar:

[0046]

[0047] 2. Manufacturing method of equal density cutting mortar:

[0048] a. Weigh 3 / 4 of the total amount of polyethylene glycol to dissolve N-methylolacrylamide, ethyl methacrylate and octyl acrylate, the same as in Example 1 below.

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Abstract

Disclosed are an isopycnic cutting slurry for linear cutting of a solar wafer and a manufacturing method thereof. The cutting slurry comprises, by weight, 100 parts of acrylic monomers, 4 parts of an initiator, 300 parts of polyethylene glycol and 280 parts of silicon carbide particles. The manufacturing method for the isopycnic cutting slurry comprises the following steps: a, weighing 3 / 4 of thetotal polyethylene glycol to dissolve all the acrylic monomers except acrylic acid; b, weighing acrylic acid to dissolve 4 / 5 of the total initiator; c. evenly mixing the two solutions, weighing a half of the mixed solution, adding the half of the mixed solution into a synthesis device, and adding another half of the mixed solution through a feeding device under the condition of a backflow at a temperature of 75 to 80 DEG C; e, after 2.0 hours, adding a mixed liquor consisting of the rest 1 / 4 of the polyethylene glycol and 1 / 5 of the initiator to the synthesis device and controlling the addingto be finished within 30 min; f. after 2.0 hours of further reaction, stopping heating and stirring, cooling the solution to a temperature of 25 DEG C for discharging. With utilization of the method in the invention, accessory environment can be controlled and cutting cost can be reduced.

Description

technical field [0001] The invention relates to isodensity cutting mortar for wire cutting of solar silicon wafers (abbreviated as isodensity cutting mortar, the same below) and a manufacturing method thereof. Background technique [0002] China's photovoltaic power generation industry has developed rapidly in the past five years, and the investment in solar silicon wafer cutting equipment has been put into operation several times and dozens of times in the past three years. The demand for cutting mortar has reached about 1200-1500 tons per day. [0003] In the process of wire cutting of solar silicon wafers, the whole mechanism is to use the hard characteristics and sharp water chestnuts of silicon carbide particles to gradually cut off the silicon rods. Therefore, the main characteristic of the cutting mortar is good fluidity, and the silicon carbide particles can be evenly distributed in the cutting mortar system. Stable dispersion, evenly covering the surface of the stee...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C10M169/04C10M177/00
Inventor 郑希
Owner 浙江德圣龙窗帘有限公司
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