Cleaning agent for silicon wafer of solar cell and using method thereof

Abstract

The invention provides a cleaning agent for a silicon wafer of a solar cell and a using method thereof, belonging to the technical field of solar cell production. The cleaning agent for the silicon wafer of the solar cell comprises the following components: sodium hypochlorous, sodium tripolyphosphate, sodium phosphate and water at a mol ratio of (5-15):(5-10):(1-5):(10-100). The cleaning agent provided by the invention can effectively remove the surface oil generated by wire cutting of monocrystalline silicon, metal impurities inside the silicon wafer, and dust and other granules attaching to the surfaces of the silicon wafer, improve the utilization rate of cell wafer assembly to more than 97%, improve the conversion efficiency of cell wafer to more than 18.2%, and improve the open-circuit voltage of the cell wafer to more than 632 mv.

Description

technical field [0001] The invention provides a solar cell silicon wafer cleaning agent and a use method thereof, belonging to the technical field of solar cell production. Background technique [0002] The importance of silicon wafer cleaning to the semiconductor industry has attracted great attention since the early 1950s, because impurities contaminated on the surface of silicon wafers seriously affect the performance, reliability and yield of cells. The impurities of the contaminants on the surface of the silicon wafer can be classified into three categories: (1) organic substances such as grease, rosin, epoxy resin, polyethylene glycol; (2) metals, metal ions and some inorganic compounds; (3) dust and others particles, etc. Silicon wafer cleaning requires that various impurities can be removed without damaging the silicon wafer. The pollution of these impurities, especially metal impurities, will form lattice defects in the high temperature diffusion, which seriously ...

AI Technical Summary

Problems solved by technology

[0004] The development of silicon wafer cleaning technology can be roughly divided into four stages. The first stage established the initial chemical and mechanism polishing, but due to improper handling, it often caused the re-precipitation of metal impurities and the re-contamination of metal impurities; From 1961 to 1971, the development of the cleaning technology using the initial RCA-1 cleaning fluid was a milestone in cleaning technology. The third stage was from 1972 to 1989. The work in this stage mainly focused on the chemical principle of RCA cleaning, applicable In-depth research and analysis of the situation and influencing factors, etc., to improve the RCA cleaning technology, RCA cleaning technology is relatively serious environmental pollution; from the fourth stage to now, focusing on the research on the mechanism and kinetics of solution cleaning and the development of new cleaning technology