Charge testing method in plasma environment and testing system

Abstract

The invention discloses a charge testing method in a plasma environment and a testing system. The testing system comprises a chip integrated with MEMS (Micro-electromechanical Systems) and CMOS, and a testing circuit, wherein the chip includes a testing unit consisting of a bi-material cantilever beam temperature-sensitive structure and a structure capable of acquiring plasma density based on electrostatic suction principle; a strain resistor is used as the testing means for acquiring the deformation of the temperature-sensitive structure and a charge collection structure; and the testing circuit is used for measuring the change of the strain resistor. During charge testing, the accumulated charges are tested preliminarily; then, the released charges are re-measured to obviate the influence of an interference factor while only keeping the change influence; and the charge accumulation amount can be calculated. The system can real-time monitor the accumulation amount and the distribution of charges in the time and space domains by using a plurality of testing units arranged in an array manner, thereby providing the possibility for real-time online measurement of the plasma influenceon devices.

Description

Technical field [0001] The invention belongs to the field of microelectromechanical systems (MEMS) and integrated circuit IC (CMOS) processing technology, and relates to real-time monitoring of plasma technology, in particular to a method for real-time monitoring of the charge state during the plasma technology, and related Chips and test systems made by integrating MEMS and CMOS are especially used to monitor charge and uniformity in processes containing low-temperature ions. Background technique [0002] Plasma is a form of matter under high temperature or specific excitation. It is the fourth state of matter in addition to solid, liquid and gaseous states. Plasma is composed of a collection of ions, electrons, and unionized neutral particles, and the whole is in a neutral state of matter. Plasma can be divided into high temperature and low temperature plasma. Low temperature plasma is widely used in the field of microelectronics processing. With the development of integrate...

AI Technical Summary

Problems solved by technology

Plasma processing has many advantages, but as device dimensions shrink, a growing problem arises: plasma-induced damage

Such methods are destructive and cannot be reused

[0006] To sum up, we not only want to understand the distribution of charges in the plasma, but also want to get the accumulation of charges on each pixel. The existing technology cannot fully meet the testing requirements.

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