Stripping transfer method of substrate of thin film solar cell
A solar cell, stripping transfer technology, applied in the direction of circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of limited use range, heavy weight of thin-film batteries, and unsatisfactory, and achieve a wide range of applications, light specific gravity, and high The effect of flatness
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[0023] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0024] like Figure 1 to Figure 3 Shown, a kind of stripping transfer method of thin-film solar cell substrate, its concrete steps are as follows:
[0025] 1. Select a hard substrate 1. The commonly used hard substrate 1 is a GaAs substrate with a thickness between 300-500 μm. Its smoothness and hardness can ensure the high flatness and precision of the material layer deposited and grown on it.
[0026] The material aluminum arsenide (AlAs) is deposited and grown on the hard substrate 1 by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) to form a corrosion sacrificial layer 2 with a thickness of 0.5 μm. The corrosion sacrificial layer 2 is not a structure contained in the finished battery, but a material layer inserted for the realization of the subsequent lift-off transfer technology.
[0027] 2. Fabricat...
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