Method for manufacturing SOI (silicon on insulator) LIGBT (lateral insulated gate bipolar transistor) device unit with p buried layer and longitudinal channel
A manufacturing method and vertical technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as unfavorable energy saving, environmental protection, high on-state power consumption, large on-state resistance, etc. state current and working efficiency, improve system reliability, and improve the effect of longitudinal withstand voltage
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[0028] A method for fabricating a vertical channel SOI LIGBT device unit with a p-buried layer, specifically comprising the following steps:
[0029] 1. Thick-film SOI wafers are used, and the thin buried insulating layer in the middle completely isolates the semiconductor substrate from the buried p-type layer, and the upper surface of the buried p-type layer is completely covered by the n-type top layer semiconductor. Among them, the buried p-type layer has a reverse impurity concentration distribution, and the n-type top layer semiconductor is used to make devices and circuits.
[0030] 2. The polished n-type top-layer semiconductor is first oxidized, first-nitrided, and first-etched to form an isolation region window, and the n-type top-layer semiconductor in the isolation region is removed by DTI (deep trench isolation technology) , forming an isolation oxide layer in which the isolation insulating layer and the buried insulating layer are integrated, and isolating the n-...
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