Silicon-on-insulator (SOI) low-resistance lateral high-voltage device and manufacturing method thereof

Abstract

The invention provides a silicon-on-insulator (SOI) low-resistance lateral high-voltage device and a manufacturing method thereof. The manufacturing method comprises the following steps of taking an SOI as a substrate, forming an N-type linear variable doping thick SOI layer and a thin silicon layer drift region, forming a thin silicon layer region, namely a thick dielectric layer, and forming a Pwell region; and forming an Nwell region, forming a gate oxide layer, forming a poly-silicon gate electrode, forming an N strips, forming a P strip, performing injection of a first P-type heavy-doping region, a first N-type heavy-doping region and a second N-type heavy-doping region to form ohmic contact, etching a first-layer contact hole of a leading-out electrode, depositing aluminum metal, and forming a source contact electrode and a drain contact electrode. The manufacturing method is highly compatible with a traditional process and has universality; with the manufactured device, the device area can be effectively reduced, and the device cost is reduced; and in the SOI low-resistance lateral high-voltage device fabricated by the method, the formulas of BV=950V and R<on, sp>=153 ohms.cm<2> can be achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to an SOI low-resistance lateral high-voltage device and a manufacturing method thereof. Background technique [0002] Compared with conventional bulk silicon technology, SOI technology has the advantages of high speed, low power consumption, high integration, small parasitic effect, good isolation characteristics, small latch-up effect and strong radiation resistance, which makes the reliability and anti-software of integrated circuits The ability to make mistakes has been greatly improved, and it is gradually becoming the mainstream technology for manufacturing integrated circuits with high speed, low power consumption, high integration and high reliability. [0003] SOI high-voltage integrated circuits (High Voltage IC, HVIC for short) based on SOI lateral high-voltage devices, as a new branch in the field of smart power integrated circuits (Smart ...

AI Technical Summary

Problems solved by technology

However, the low vertical withstand voltage of SOI lateral high-voltage devices limits its application in HVIC. According to the universal theory of SOI dielectric field enhancement (ENhanced DIelectric layer Field, ENDIF for short), the use of ultra-thin top-layer silicon can improve the longitudinal performance of SOI devices. withstand voltage, but it also leads to a larger specific on-resistance

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