Standard complementary metal oxide semiconductor (CMOS) process-based color image sensor

Abstract

The invention discloses a standard complementary metal oxide semiconductor (CMOS) process-based color image sensor, which comprises a color pixel unit array, a noise removing module, a cache, a digital controller and an analog-digital converter, wherein an analog input end of the noise removing module is connected with an output end of the color pixel unit array; an input end of the cache is connected with an output end of the noise removing module, and the cache is used for caching an output signal of the noise removing module and performing parallel / series conversion; a first output end of the digital controller and a first output end of a digital processor are connected with an input end of the color pixel unit array; a second output end of the digital controller is connected with a digital input end of the noise removing module; a digital control end of the digital processor is connected with a fourth output end of the digital controller; the digital processor is used for processing a digital image signal output by the analog-digital converter and converting the signal into image information for output; an analog input end of the analog-digital converter is connected with an output end of the cache and a digital input end of the analog-digital converter is connected with a third output end of the digital controller; the output end of the analog-digital converter is connected with an analog input end of the digital processor; and the analog-digital converter is used for converting an analog signal which is output by the cache into a digital signal.

Description

technical field [0001] The invention relates to the technical field of semiconductor CMOS image sensors, in particular to the technical field of a metal grating color image sensor based on a standard CMOS process. Background technique [0002] Semiconductor color image sensors have been developing toward high integration and low cost, and have a huge market demand. At present, the most widely used semiconductor color image sensors include color filter array (CFA-Color Filter Array) image sensor, thin film technology (TFA-Thin film on ASIC) image sensor and filterless color CMOS image sensor under Foveon X3 technology ( FCS-Filterless Color Sensor). [0003] The color filter image sensor and the thin-film technology image sensor add a Bayer filter to the photosensitive unit. Color filter optics used to select the desired radiation band fall into two categories: color filters and thin-film filters. Color filters are sheets of flat glass or gelatin of various colors. Thin-f...

AI Technical Summary

Problems solved by technology

However, these color image sensors need to add other processes on the basis of standard CMOS processes or non-standard CMOS processes that require adjustment of process parameters

The main disadvantages of these complex processes limit the development of high integration and low cost of semiconductor color image sensors

Images