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Preparation method of multilayer transparent conductive film, film prepared thereby, and application thereof

A transparent conductive film and powder technology, which is applied in coating, metal material coating process, vacuum evaporation plating, etc., can solve the problems of difficult to obtain low resistivity GZO film and high cost, and achieve good film adhesion, Ease of control and cost reduction

Inactive Publication Date: 2011-07-27
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to obtain GZO thin films with low resistivity when prepared at low temperature without heat treatment.
[0004] Ultra-thin conductive metal layers can also be used as transparent conductive films, but currently only noble metals such as gold, silver, and platinum with low resistivity and good chemical stability can be used, which are expensive and limit their applications.

Method used

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  • Preparation method of multilayer transparent conductive film, film prepared thereby, and application thereof
  • Preparation method of multilayer transparent conductive film, film prepared thereby, and application thereof
  • Preparation method of multilayer transparent conductive film, film prepared thereby, and application thereof

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preparation example Construction

[0017] see figure 1 , showing a method for preparing a multilayer transparent conductive film according to an embodiment of the present invention, which includes the following steps:

[0018] S01: Ga 2 o 3 Powder and ZnO powder are mixed and sintered as GZO target material, the Ga 2 o 3 The mass ratio of the powder to the ZnO powder is 1 / 99 to 1 / 19;

[0019] S02: Provide Cu target material;

[0020] S03: Put the GZO target material and the Cu target material into the magnetron sputtering chamber, vacuumize, and alternately sputter the GZO layer and the Cu layer on the substrate to obtain a sandwich-structured GZO-Cu-GZO transparent conductive film.

[0021] In step S01, the Ga 2 o 3 The powder and the ZnO powder are uniformly mixed, for example, sintered at a temperature of 900° C. to 1350° C. to obtain a GZO ceramic target. Preferably, Ga 2 o 3 The mass ratio of the powder to the ZnO powder is 1 / 80 to 1 / 40, more preferably Ga 2 o 3 The mass ratio of the powder to...

Embodiment 1

[0029] Use Ga 2 o 3 :ZnO=1:66 (mass ratio) powder, after uniform mixing, sintered at 1250°C at high temperature to form a Φ60×2mm ceramic target, and put it into a vacuum chamber together with a custom-made Cu target (Φ50×3mm). Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 50 mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the argon gas of 20 sccm is introduced, and the pressure is adjusted to 1.0 Pa. The sputtering power of the GZO target was 100W, and the sputtering power of the Cu target was 60W. The thickness of the three layers of the obtained GZO-Cu-GZO film is 50nm, 10nm and 80nm respectively, the sheet resistance is 15Ω / □, and the average transmittance of visible light is 85%.

Embodiment 2

[0031] Use Ga 2 o 3 :ZnO=1:66 (mass ratio) powder, after uniform mixing, sintered at 1250°C at high temperature to form a Φ60×2mm ceramic target, and put it into a vacuum chamber together with a custom-made Cu target (Φ50×3mm). Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 50 mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the argon gas of 20 sccm is introduced, and the pressure is adjusted to 1.0 Pa. The sputtering power of the GZO target was 100W, and the sputtering power of the Cu target was 60W. The thickness of the three layers of the obtained GZO-Cu-GZO thin film is 70nm, 5nm, 80nm respectively, the sheet resistance is 300Ω / □, and the average transmittance of visible light is 92%.

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Abstract

The invention relates to the preparation field of semiconductor material, and provides a preparation method of a multilayer transparent conductive film, the film prepared thereby, and the application thereof. The preparation method comprises the steps of: mixing Ga2O3 powder and ZnO powder, sintering the mixture and taking the product as GZO target material, wherein the mass ratio between the Ga2O3 powder and ZnO powder is 1 / 99-1 / 19; providing Cu target material; putting the GZO target material and the Cu target material into a magnetron sputtering cavity; vacuumizing and alternately sputtering a GZO layer and a Cu layer on a substrate; and finally obtaining the GZO-Cu-GZO transparent conductive film with a sandwich structure. The invention also provides the multilayer transparent conductive film prepared by the method, and the application of the film in a semiconductor photoelectric device.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic material preparation, and in particular relates to a preparation method of a multilayer transparent conductive film, the prepared film and its application. Background technique [0002] Transparent conductive film is a photoelectric material that combines optical transparency and conductivity. Due to its excellent photoelectric properties, it has become a research hotspot and a frontier topic in recent years. It can be widely used in solar cells, LEDs, TFTs, LCDs and touch screens Wait for the screen to display the field. Although ITO film is currently the most widely used transparent conductive film material with excellent comprehensive photoelectric properties, indium is toxic, expensive, poor in stability, and easy to be reduced in a hydrogen plasma atmosphere. People are trying to find a low-cost It is an ITO replacement material with excellent performance. Among them, Ga-doped Zn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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