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Three dimensional semiconductor device, method of manufacturing the same and electrical cutoff method for using fuse pattern of the same

一种半导体、保险丝的技术，应用在三维半导体装置领域，能够解决无法重新使用芯片或封装、不可能修好三维半导体装置、经济损失等问题

Inactive Publication Date: 2011-07-13
EPWORKS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since it is impossible to repair a three-dimensional semiconductor device defective due to a defective chip or package, and to reuse a normal chip or package, all chips and packages constituting the defective device must be discarded
Therefore, severe economic losses are suffered due to the decline in the yield of semiconductor devices

Method used

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  • Three dimensional semiconductor device, method of manufacturing the same and electrical cutoff method for using fuse pattern of the same
  • Three dimensional semiconductor device, method of manufacturing the same and electrical cutoff method for using fuse pattern of the same
  • Three dimensional semiconductor device, method of manufacturing the same and electrical cutoff method for using fuse pattern of the same

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Embodiment Construction

[0025] The advantages and features of the present invention and the methods for achieving these objects will be more clearly understood with reference to the following exemplary embodiments described with accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the illustrative embodiments set forth herein. Of course, these exemplary embodiments are provided to make the present disclosure more thorough, and enable those skilled in the art to fully embody and realize the present invention. The scope of application of the invention is defined by the appended claims. Each component is assigned the same reference number throughout the drawings.

[0026] Hereinafter, a three-dimensional semiconductor device, a manufacturing method thereof, and a power cutoff method using a fuse pattern thereof according to exemplary embodiments of the present invention will be described in detail with reference to the accompa...

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Abstract

Provided is a three-dimensional semiconductor device. The three-dimensional semiconductor device includes a body in which a plurality of semiconductor chips or packages are stacked, a protective substrate configured to protect an outer layer chip or package of the body and configured to transmit a laser beam, and a fuse pattern portion having a pattern of a fuse function formed to cut off an electrical connection of a defective chip or package by the laser beam penetrating the protective substrate when at least one of the chips or packages is defective.

Description

technical field [0001] The present invention relates to a three-dimensional semiconductor device, and more particularly to a three-dimensional semiconductor device having a plurality of stacked semiconductor chips or packages to block the operation of some defective chips or packages, its manufacturing method, and power utilizing its fuse pattern cut off method. Background technique [0002] Recently, semiconductor devices are trending towards high efficiency, multi-function, ultra-miniaturization and high productivity. Therefore, the three-dimensional semiconductor manufacturing method largely uses the technology of stacking a plurality of semiconductor chips or packages. In the three-dimensional semiconductor manufacturing method, three-dimensional semiconductor devices are manufactured by stacking chips or packages on a chip or wafer level, and erecting the stacked chips or packages on an external substrate by a ball grid array method or the like. [0003] However, in a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/12
CPCH01L2225/06596H01L2225/06513H01L2225/06541H01L23/5382H01L2224/16145H01L23/5258H01L25/0657H01L2225/06527H01L21/82
Inventor 金玖星
Owner EPWORKS
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