Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming crystal silicon film

A technology of amorphous silicon thin film and microcrystalline silicon thin film, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of low crystallization rate amorphous structure, high equipment cost, long process time, etc. , to achieve the effects of increasing capacity utilization, improving crystallization quality, and shortening process time

Inactive Publication Date: 2011-06-22
华映视讯(吴江)有限公司 +1
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the extremely short action time, it will not cause thermal damage to the substrate, and can be applied to glass substrates, but the equipment cost is high, maintenance is complicated, and the process time is long, resulting in high production costs.
The third is the hydrogen dilution technique of chemical vapor deposition. A large amount of hydrogen gas is used in the manufacturing process. The role of hydrogen plasma is to etch away weaker silicon atoms and then deposit a microcrystalline silicon film, but The crystallization rate of this method is still low and there are a lot of amorphous structures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming crystal silicon film
  • Method for forming crystal silicon film
  • Method for forming crystal silicon film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] Certain terms are used throughout the specification and preceding claims to refer to particular elements. It should be understood by those skilled in the art that manufacturers may refer to the same element by different terms. The specification and the scope of the preceding claims do not use the difference in name as the way to distinguish components, but the difference in function of the components as the basis for the difference. "Includes" or "comprises" mentioned throughout the specification and the preceding claims is an open term, so it should be interpreted as "including but not limited to".

[0012] Please refer to figure 1 . figure 1 It is a schematic flow chart of the method for forming a crystalline silicon thin film of the present invention. like figure 1 As shown, step 1 provides a substrate, and forms a first silicon structure thin film on the substrate. Wherein, the first silicon structure film may include an amorphous silicon film, a microcrystalli...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for forming a crystal silicon film. The method comprises the following steps: providing a substrate, and forming a first silicon structure film (such as a noncrystalline silicon film) on the substrate; modifying the first silicon structure film to form a seed crystal layer, wherein the modification comprises a hydrogen plasma processing and a helium plasma processing; and directly forming a second silicon structure film (such as a microcrystalline silicon film) on the seed crystal layer. The method has the advantages of lower cost and higher quality due to the modification comprising the hydrogen plasma processing and the helium plasma processing.

Description

technical field [0001] The invention relates to a method for forming a crystalline silicon film, especially a method for modifying a first silicon structure film by using hydrogen plasma and helium plasma to form a second silicon structure film. Background technique [0002] At present, amorphous silicon (amorphous silicon) thin film is widely used as the material of the semiconductor layer of the pixel switching element on the liquid crystal flat panel display. Material limitations in application. Crystalline silicon is different from amorphous silicon in that it has a silicon grain structure, so it has better physical properties, such as higher electron mobility, so it has become one of the options to replace amorphous silicon thin film materials. Among them, crystalline silicon (crystalline silicon) materials can be divided into microcrystalline silicon (microcrystalline silicon), nanocrystalline silicon (nanocrystalline silicon), polycrystalline silicon (polycrystalline...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20H01L31/18H01L21/20
CPCY02P70/50
Inventor 林烱暐蔡耀昌陈易良江美昭邹元昕
Owner 华映视讯(吴江)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com