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Manufacturing method of high-purity copper targets

A production method and high-purity technology are applied in the field of production of high-purity copper targets, which can solve the problems of high technical difficulty, high cost of high-purity targets, and no rolling and heat treatment of high-purity copper targets, so as to improve production efficiency. , to prevent internal grain changes, to avoid the effect of uneven internal grain size

Active Publication Date: 2011-06-15
KONFOONG MATERIALS INTERNATIONAL CO LTD
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Problems solved by technology

Moreover, at present, China does not have the ability to produce the above-mentioned copper ingots, and there is no related research on rolling and heat treatment of high-purity copper targets. The production of high-purity copper targets has long relied on foreign countries, resulting in the cost of producing high-purity copper targets. Higher, technically difficult and other issues

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  • Manufacturing method of high-purity copper targets
  • Manufacturing method of high-purity copper targets
  • Manufacturing method of high-purity copper targets

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Embodiment Construction

[0038] The inventors of the present invention found that the copper material is generally a copper ingot extending in the thickness direction, and its size and internal crystal grains do not meet the requirements, and the size and internal crystal grains need to be cold-rolled to meet the requirements. The control of the amount of rolling during cold rolling has an effect on the size as well as the internal grain size. If the amount of rolling is too large, the thickness of the target copper target will be too small or the internal grains of the target copper target will change and fail to meet the requirements. During the rolling process, the uneven force on each point on the rolled surface of the copper material will cause the surface of the copper target to be uneven after rolling.

[0039] In view of the above problems, the inventors proposed a method for manufacturing a high-purity copper target. Such as figure 2 As shown, the method includes:

[0040] Step S21, provi...

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Abstract

The invention relates to a manufacturing method of high-purity copper targets, comprising the steps of: providing a copper material with original thickness; carrying out cold rolling on the copper material to prepare an objective copper target; and carrying out heat treatment on the objective copper target, wherein the cold rolling step comprises the steps of first cold rolling with the first cold rolling quantity, second cold rolling with the second cold rolling quantity and third cold rolling with the third cold rolling quantity, and the first cold rolling quantity, the second cold rolling quantity and the third cold rolling quantity are reduced in sequence. Through control of the cold rolling quantity, the angle of the copper material, the temperature of heat treatment and the time of heat treatment, the high-purity copper target which has appropriate size and is internally provided with crystal particles of the size meeting requirements is obtained.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a high-purity copper target. Background technique [0002] With the development of semiconductor manufacturing technology, the integration of integrated circuit chips is getting higher and higher, and multilayer metal interconnection technology has been widely used. The traditional integrated circuit manufacturing process uses aluminum as the metal interconnection material, but with the continuous reduction of the device feature size in the integrated circuit chip, the performance of the aluminum interconnection layer in terms of signal delay cannot meet the requirements. Copper with low resistivity needs to be selected as interconnect material to reduce signal delay and increase clock frequency. As a result, aluminum interconnect layers are gradually being replaced by copper interconnect layers. Copper interconnect layers reduce resistor-ca...

Claims

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Application Information

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IPC IPC(8): B21D25/00
Inventor 姚力军潘杰王学泽袁海军刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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