GaN blue light LED device using 3C-SiC-Si as substrate

Abstract

The invention relates to a GaN blue light light-emitting diode (LED) device using 3C-SiC-Si as a substrate. A manufacturing method comprises the following steps of: preparing a silicon wafer, manufacturing a buffer layer, which consists of an ultrathin carbonizing layer, a blocking seed layer and a cubic silicon carbide epitaxial layer, of the device on a silicon wafer serving as a basic substrate layer; depositing GaN on the buffer layer to form a GaN structural layer; bonding an aluminum plate or a nickel plate plated with silver or magnesium on the GaN structural layer to form ohmic contact; and etching silicon to form the GaN blue light LED device with a self-support structure. By the implementation and application of the technology of the invention, diameters of LEDs wafers are increased (which can reach 12 maximally), the production cost and machining cost of LED chip materials are reduced greatly, the high-quality GaN depositing layer can be obtained effectively and also can be used as barrier layer with high chemical stability to etch the silicon, and the opportunity is created for the improvement on LED tube cores, the extraction of light and the elimination of high-temperature stress.

Description

technical field [0001] The invention belongs to the technical field of manufacturing semiconductor devices, and relates to a GaN blue LED device with 3C-SiC-Si as a substrate and a manufacturing method thereof. Background technique [0002] In recent years, low-cost, clean, and energy-efficient solid-state light source LEDs technology has attracted great attention. LEDs are becoming a substitute for traditional light sources due to their low energy consumption and long lifespan. Gallium Nitride (GaN), was first used due to its excellent light emitting properties. GaN is usually epitaxially grown on non-identical substrates such as sapphire and 4H / 6H-SiC, but the characteristics of sapphire and 4H / 6H-SiC are not very ideal. For example: Although the price of sapphire substrate is relatively low and the diameter of the wafer is large, its thermal conductivity is low, which makes it difficult to remove the heat generated during work; During the design process of the electric...

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Problems solved by technology

For example: Although the price of sapphire substrate is relatively low and the diameter of the wafer is large, its thermal conductivity is low, which makes it difficult to remove the heat generated during work; During the design of the electrical contact circuit, the front-end area of ​​the die must be used too much, thus reducing the area of ​​the die that can be used to emit light, and complicating the product manufacturing process

Using 4H / 6H-SiC substrate, it is regrettable that its current price is too expensive, but in reality, the price needs to drop to about $10~20 / cm 2 It is easy to be accepted by the market; another disadvantage of using 4H / 6H-SiC substrate is that it is very difficult to obtain a high-quality, large-diameter wafer, because it uses the original seed crystal sublimation method to grow the wafer, and the size of the wafer is small , and the crystallization time is long, and the crystallization temperature is also extremely high

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