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Areal heating wafer table and heating method for laser heat treatment device

A laser heat treatment and zone heating technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of wafer surface topography damage, large temperature gradient, etc., to reduce adverse effects, reduce temperature gradient, The effect of reducing the temperature distribution gradient

Inactive Publication Date: 2011-05-18
TSINGHUA UNIV
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  • Abstract
  • Description
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Problems solved by technology

The local high temperature area can produce a larger temperature gradient than the surrounding lower temperature area, which may still cause damage to the surface morphology of the wafer

Method used

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  • Areal heating wafer table and heating method for laser heat treatment device
  • Areal heating wafer table and heating method for laser heat treatment device
  • Areal heating wafer table and heating method for laser heat treatment device

Examples

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Embodiment Construction

[0019] The invention provides a partition auxiliary heating stage and a partition heating method used in laser heat treatment of semiconductor wafers. The structure of the table partition and independent heating control of each area is as follows: figure 1 , figure 2 shown.

[0020] exist figure 1 In the process, the chip stage is first divided into different unit areas 1, and the different unit areas are separated by heat insulating material 2, and a heating source with independent control of heating power is placed under each heating unit area 1 of the chip stage 3. Form a wafer stage with independent heating control for each unit area; an additional sub-high temperature buffer zone 7 is introduced between the high temperature area 5 introduced by laser heat treatment and the low temperature substrate preheating area 6 . The heating can be controlled independently in each zone, and the configuration of the heaters in each zone, such as figure 2 shown. The specific way...

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Abstract

The invention discloses an areal auxiliary heating wafer table and an areal heating method for semiconductor wafer laser heat treatment, which belong to semiconductor manufacturing equipment and technical range. The method comprises the following steps of: dividing the heating wafer table into different heating areas in a laser heat treatment device, isolating the different unit areas by using a heat insulation material, and configuring heaters for independently controlling heating power below the different heating areas respectively so as to independently control the heating temperature in each area; and introducing an extra secondary high-temperature buffer area between the high-temperature area of laser beam heat treatment and a low-temperature substrate pre-heating area. The temperature distribution gradient on the wafer is effectively improved; relative to uniform auxiliary heating of the whole wafer, adverse influence of heat stress is reduced more effectively; and better laser heat treatment effect is provided. The heat dissipation gross in the whole laser heat treatment process is remarkably reduced, so not only the energy is saved, but also the difficulties of heat isolation design and implementation of the whole machine are reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a partitioned heating plate stage and a heating method in a laser heat treatment device. Background technique [0002] With the advancement of IC manufacturing technology, laser processing of semiconductor wafers has gradually become a novel technical option in the field of semiconductor processing and manufacturing due to its unique advantages. The main advantage of laser processing is that high-density pure energy can be fed to the surface of the processed material through the laser beam, providing activation energy for physical-chemical processes such as material surface processing and treatment, chemical reactions, or physical phase transitions. This process does not involve material particles such as charged particles, plasma groups, oxidation / reduction agents, etc., so no parasitic reactions and processes occur, and there is no additional dop...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02
Inventor 严利人周卫刘朋窦维治张伟刘志弘
Owner TSINGHUA UNIV
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