Non-volatile memory device as well as non-volatile memory and manufacturing method thereof

Abstract

The invention relates to a non-volatile memory device as well as a non-volatile memory and a manufacturing method thereof, wherein the non-volatile memory comprises a semiconductor substrate, and the semiconductor substrate comprises a surface region, a source region positioned in the semiconductor substrate, a drain region positioned in the semiconductor substrate, a first channel region positioned in the semiconductor substrate, a second channel region positioned in the semiconductor substrate, a first dielectric layer covering the first channel region, a second dielectric layer covering the second channel region, a floating gate structure covering the first dielectric layer on the first channel region, a third dielectric layer positioned on the floating gate structure and a control gate layer covering the second dielectric layer and the third dielectric layer, wherein the first channel region extends between a first part of the source region and a first part of the drain region; and the second channel region extends between a second part of the source region and a second part of the drain region. With the adoption of the invention, the high manufacturable yield of the non-volatile memory with low scale can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a nonvolatile storage device, a nonvolatile storage device and a manufacturing method thereof. Background technique [0002] Integrated circuits, or "ICs," have grown from a handful of interconnected devices fabricated on a single silicon chip to millions of devices. Current ICs offer performance and complexity far beyond what was originally imagined. To achieve improvements in complexity and circuit density (ie, the number of devices that can be packed onto a given chip area), the size of the smallest device feature, also known as device "geometry," has become smaller with each IC generation. Semiconductor devices are now manufactured with features smaller than a quarter of a micron in cross-section. [0003] Increased circuit density not only improves the complexity and performance of ICs, but also provides lower priced components to consumers. IC manufacturing equ...

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Problems solved by technology

Such devices are limited by difficult further scaling and low manufacturability yields

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