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Solar cell

A technology of solar cells and energy bandgap, applied in the field of solar cells, can solve the problems of low conversion efficiency, achieve the effect of increasing output power and improving light conversion efficiency

Inactive Publication Date: 2013-10-30
DU PONT APOLLO
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the conversion efficiency of such solar cells to light is still low

Method used

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Embodiment Construction

[0033] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0034] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than here, so the present invention is not limited by the specific embodiments disclosed below.

[0035] In order to solve the problems in the background technology, the inventor has carried out energy band analysis to the solar cell of prior art, refer to figure 2 ,show figure 1 Schematic diagram of the energy bands of the solar cell shown. The first solar cell 1 and the second solar cell 2 form a tunneling junction 12 with a larger energy band gap Eg at the junction. The tunnel junction 12 with a large energy band gap Eg increases the difficulty...

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Abstract

The invention discloses a solar cell. The solar cell comprises a first solar cell unit, a second solar cell unit and an intermediate layer, wherein the first solar cell unit comprises a first p-i-n semi-conductor layer, the second solar cell unit comprises a second p-i-n semi-conductor layer, and the intermediate layer is arranged between the first solar cell unit and the second solar cell unit. The first p-i-n semi-conductor layer and the second p-i-n semi-conductor layer which are in contact with the intermediate layer are of different doping types, the intermediate layer is of a non-doping semi-conductor layer, and the band gap of the intermediate layer is smaller than the band gaps of the first p-i-n semi-conductor layer and the second p-i-n semi-conductor layer which are arranged at the two sides of the intermediate layer and are in contact with the intermediate layer. Tunneling recombination of electrons and a cavity at the position of the intermediate layer can be promoted, therefore, the output power of the solar cell can be improved, and the optical conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell. Background technique [0002] Solar cells are generally characterized by a solid-state crystalline structure that forms a band gap between a valence band and a conduction band. [0003] When light is absorbed by a material having a solid crystal structure, electrons occupying lower energy states are excited across the energy bandgap to higher energy states. For example, when electrons in the valence band of a semiconductor absorb sufficient energy from photons of solar radiation, they can jump across the energy bandgap to a higher energy conduction band. Electrons excited to higher energy states leave unoccupied lower energy sites, or holes, which, like free electrons in the conduction band, can move between atoms to form charge carriers, thereby contributing to the conduction of the crystal sex. Most photons absorbed in the semiconductor generate such electr...

Claims

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Application Information

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IPC IPC(8): H01L31/076H01L31/0352
CPCY02E10/50Y02E10/548
Inventor 颜正泰陈科翰陈浩斌
Owner DU PONT APOLLO
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