Resistance-variable gating device with high voltage-withstanding self-current limiting performance and preparation method thereof

Abstract

The invention relates to a resistance-variable gating device with high voltage-withstanding self-current-limiting performance and a preparation method of the resistance-variable gating device. The resistance-variable gating device structurally comprises a substrate, a bottom electrode film, a functional layer film and a top electrode film which are sequentially arranged from bottom to top, and thearea of the bottom electrode film is larger than that of the functional layer film. No other material exists between the material thin film layers, and the adjacent thin film layers form a multi-stage secondary functional layer through mutual diffusion to a certain extent, so that the resistance-variable gating device still keeps a low current value under high voltage, and the crosstalk current in a resistance-variable device integrated array can be effectively suppressed. According to the present invention, the problem of component segregation of the functional layer film obtained by deposition in a vacuum state is solved, so that the high-resistance state is more stable. A special material interface effect is formed between the bottom electrode thin film and the functional layer thin film, the current passing through the gating device is stabilized at an extremely low fixed value under the high voltage, so that a self-current-limiting effect is formed, and the external clamping current is omitted.

Description

technical field [0001] The invention belongs to the technical field of gating devices, and in particular relates to a resistive switching gating device with high pressure-resistant self-limiting current performance and a preparation method. Background technique [0002] Resistive switching device technology is an important part of future high-density, next-generation storage, and next-generation computing technologies. From the storage point of view, using a resistive switch device as a memory has the advantages of lower power consumption and faster speed. From the perspective of storage-computing integration, compared with the traditional Von Neumann architecture computing architecture, the computing network based on resistive switching devices can avoid the problem of limited bus speed in traditional computing architectures, and provides a solution beyond Moore's Law. technical approach. However, with the maturity of resistive switching device technology, the difficulty ...

AI Technical Summary

Problems solved by technology

[0004] However, the gates in the prior art only have the function of current suppression, and the gates with both high withstand voltage and self-limiting performance have not been reported yet.

Images