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Enhanced Raman scattering substrates of silicon semiconductor and a manufacturing method and application for the same

A Raman scattering enhancement, semiconductor technology, applied in Raman scattering, application of thermal effects to detect fluid flow, light guide and other directions, can solve the problems of toxic and side effects of precious metal particles, and achieve the effect of enhancing Raman scattering signals

Active Publication Date: 2011-04-20
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The toxic and side effects of noble metal particles on organisms has always limited the application of surface-enhanced Raman scattering technology in the field of biomedicine.

Method used

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  • Enhanced Raman scattering substrates of silicon semiconductor and a manufacturing method and application for the same
  • Enhanced Raman scattering substrates of silicon semiconductor and a manufacturing method and application for the same
  • Enhanced Raman scattering substrates of silicon semiconductor and a manufacturing method and application for the same

Examples

Experimental program
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Effect test

Embodiment 1

[0038] 1) Soak and clean the P-type (100) monocrystalline silicon substrate in the mixed solution of silver nitrate solution and hydrofluoric acid for 2 minutes and then take it out, wherein the concentration of silver nitrate in the mixed solution is 5 mmol / L, the concentration of hydrofluoric acid is 4.8mol / L; Then the P-type (100) monocrystalline silicon substrate soaked in silver nitrate is placed in a container filled with an etching solution mixed with hydrogen peroxide and hydrofluoric acid for etching Etching for 30 minutes, the container containing the etching solution mixed with hydrogen peroxide and hydrofluoric acid is placed in a water bath, the temperature of the water bath is 50°C, the concentration of hydrogen peroxide in the etching solution is 4mmol / L, and the concentration of hydrofluoric acid is 5.5mol / L; at the place where silver ions are deposited on the surface of the P-type (100) single crystal silicon substrate, Si will be etched down, while at the pla...

Embodiment 2

[0043] 1) Soak and clean the P-type (100) monocrystalline silicon substrate in the mixed solution of silver nitrate solution and hydrofluoric acid for 2.5 minutes and then take it out, wherein the concentration of silver nitrate in the mixed solution is 8 mmol / L, the concentration of hydrofluoric acid is 4.8mol / L; Then the P-type (100) monocrystalline silicon substrate soaked in silver nitrate is placed in a container filled with an etching solution mixed with hydrogen peroxide and hydrofluoric acid for etching Etching for 35 minutes, the container containing the etching solution mixed with hydrogen peroxide and hydrofluoric acid is placed in a water bath, the temperature of the water bath is 40°C, the concentration of hydrogen peroxide in the etching solution is 2mmol / L, and the concentration of hydrofluoric acid is 4.8mol / L; at the place where silver ions are deposited on the surface of the P-type (100) single crystal silicon substrate, Si will be etched down, while at the p...

Embodiment 3

[0047] 1) Soak and clean the P-type (100) monocrystalline silicon substrate in the mixed solution of silver nitrate solution and hydrofluoric acid for 3 minutes and then take it out, wherein the concentration of silver nitrate in the mixed solution is 10mmol / L, the concentration of hydrofluoric acid is 4.8mol / L; Then the P-type (100) monocrystalline silicon substrate soaked in silver nitrate is placed in the container containing the etching solution mixed with hydrogen peroxide and hydrofluoric acid for etching Etching for 25 minutes, the container containing the etching solution mixed with hydrogen peroxide and hydrofluoric acid is placed in a water bath, the temperature of the water bath is 45°C, the concentration of hydrogen peroxide in the etching solution is 3mmol / L, and the concentration of hydrofluoric acid is 5mol / L; at the place where silver ions are deposited on the surface of the P-type (100) single crystal silicon substrate, Si will be etched down, while at the pla...

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Abstract

The invention relates to enhanced Raman scattering substrates of silicon semiconductor which possessed good biological compatibility, a preparation method for the same, and the detection of rhodamine 6G molecules and 4-aminothiophenol molecules in solution with the said substrate. The invention adopts a chemical etching method to etch vertically-arranged silicon nanowire array in the surface of the monocrystalline silicon chip; then flocculent silver branches produced as by-products in the silicon nanowire array top in the etching process are removed; and a lot of Si-H bond are decorated in the nanowire surface. The enhanced Raman scattering substrates of silicon semiconductor are constituted by the vertically-arranged silicon nanowire array in the surface of the monocrystalline silicon chip and do not contain precious metal silver; the silicon nanowire surface is decorated with Si-H bonds. The invention realizes for the first time the preparation of enhanced Raman scattering substrates of silicon emiconductor which possessed good biological compatibility with only silicon materials rather than any precious metals.

Description

technical field [0001] The present invention relates to a nanostructured device based on the surface-enhanced Raman scattering effect, in particular to a Raman-scattering enhanced substrate of a silicon-based semiconductor with good biocompatibility, as well as a method for preparing the substrate, and using the substrate for in-solution Detection of rhodamine 6G molecule and 4-aminothiophenol molecule. Background technique [0002] Enhanced Raman spectroscopy on the surface of target molecules, as a means of trace detection of target molecules in chemical solutions, has received extensive attention since its discovery. The surface-enhanced Raman scattering effect (SERS) usually needs to detect noble metal particles (such as gold, silver, platinum) in the substrate. Under the excitation of the light field, the conduction electrons in the noble metal particles will generate collective resonance, that is, surface plasmon resonance ( Surface Particle Plasmon Resonance), which ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B1/00B81C1/00G01N21/65
Inventor 师文生王晓天穆丽璇佘广为
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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