Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multilayer anti-reflection film for solar cell and preparation method thereof

A technology of solar cells and manufacturing methods, which is applied in the manufacture of circuits, electrical components, final products, etc., can solve problems such as inability to achieve effects, achieve optical matching and electrical passivation, simple preparation process, and low equipment cost.

Inactive Publication Date: 2011-04-06
浙江首科科技有限公司
View PDF1 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

"Although this patent has certain improvements, it still cannot achieve the desired effect.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multilayer anti-reflection film for solar cell and preparation method thereof
  • Multilayer anti-reflection film for solar cell and preparation method thereof
  • Multilayer anti-reflection film for solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] like figure 1 As shown, the present invention provides a multilayer anti-reflection film for solar cells, comprising SiO 2 film 2 and anti-reflection film 3, the SiO 2 The film 2 is arranged on the solar cell window layer 1, and the anti-reflection film 3 is arranged on the SiO 2 film 2, wherein: the SiO 2 The thickness of the film 2 is 5-40 nm; the thickness of the anti-reflection film 3 is 50-100 nm, and is a light-transmitting film with a refractive index of about 2.3-2.4.

[0020] The anti-reflection film 3 can be made of TiO 2 / SiO 2 Bilayer film, also MgF / TiO 2 / SiO 2 , or SiC / TiO 2 / SiO 2 , SiNx / TiO 2 / SiO 2 , ZnO / TiO 2 / SiO 2 etc. in the form of multilayer films. In this embodiment, as figure 1 As shown, the antireflection film 3 is in the form of a bilayer film.

[0021] The anti-reflection film 3 is covered with EVA 4 . EVA is a plastic material composed of ethylene (E) and vinyl acetate (VA).

[0022] In the solar cell window layer (the cell'...

Embodiment 2

[0024] The manufacturing method of the multilayer antireflection film of the solar cell described in Example 1:

[0025] After the silicon wafers have undergone the normal process of making solar cells, such as texturing, diffusion, and phosphorus washing, thermal oxidation or sol-gel methods are used. + A layer of SiO with a thickness of 5 to 40 nm is grown 2 membrane. Then in SiO 2 An anti-reflection film of 50-100 nm is deposited on the film. After that, the anti-reflection film is covered with EVA and glass encapsulation, and this encapsulation process is a common process.

[0026] In this embodiment, the anti-reflection film is a light-transmitting film with a refractive index of about 2.3, and TiO can be used 2 / SiO 2 bilayer membranes, such as figure 1 shown in.

Embodiment 3

[0028] The manufacturing method of the multilayer antireflection film of the solar cell described in Example 1:

[0029] After the silicon wafer has undergone normal texturing, diffusion, phosphorus washing and other solar cell preparation processes, thermal oxidation or sol-gel methods are used to form the P in the window layer of the solar cell. + A layer of SiO with a thickness of 5 to 40 nm is grown 2 membrane. Then in SiO 2 An anti-reflection film of 50-100 nm is deposited on the film. After that, the anti-reflection film is covered with EVA and glass encapsulation, and this encapsulation process is a common process.

[0030]In this embodiment, the anti-reflection film is a light-transmitting film with a refractive index of about 2.4. In order to achieve the best optical matching, it is in the form of a multi-layer film, which is MgF / TiO 2 / SiO 2 , SiC / TiO 2 / SiO 2 , SiNx / TiO 2 / SiO 2 , ZnO / TiO 2 / SiO 2 one of the others.

[0031] In the present invention, the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a multilayer anti-reflection film for a solar cell and a preparation method thereof. The method comprises the following steps of: generating a layer of SiO2 film with the thickness between 5 and 40nm on a window layer of the solar cell; depositing the anti-reflection film with the thickness of between 50 and 100nm on the SiO2 film; and coating ethylene-vinyl acetate (EVA) and a glass envelope on the anti-reflection film. The anti-reflection film is a pervious film of which the refractive index is between 2.3 and 2.4. A TiO2-based anti-reflection film has passivation effect, has anti-reflection effect after packing components and can replace the conventional SiNx single-layer anti-reflection film commonly used in the industry, and the antireflection effect and the passivation effect can be comparable with those of SiNx. A multilayer film structure has a simple preparation process and low cost and is a relatively ideal structure.

Description

technical field [0001] The invention relates to a solar cell, in particular, to a multi-layer antireflection film for a solar cell and a manufacturing method thereof, belonging to the technical field of solar energy manufacturing. Background technique [0002] TiO was generally used in early solar cell production 2 As an optical anti-reflection coating. But TiO 2 No passivation of silicon material, use TiO 2 The open circuit voltage of the solar cell used as the antireflection film is low, and it is difficult to improve the efficiency. Therefore, it is gradually replaced by the SiNx anti-reflection film with good anti-reflection effect and passivation at the same time. Therefore, SiNx is mostly used as the antireflection film in the current solar cell production. However, the production cost of the SiNx anti-reflection film is relatively high, and the reflectivity of components using SiNx as the anti-reflection film after packaging is high. [0003] After literature se...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCY02P70/50
Inventor 朱军
Owner 浙江首科科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com