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Anisotropic etching method of graphite or graphene

An Anisotropic, Graphene Technology

Active Publication Date: 2011-03-30
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage is: the edge of graphene etching is not smooth, and the roughness is greater than 5nm
Therefore, there are still many difficulties in the processing, tailoring and patterning of graphene with controllable size and atomically flat edges.

Method used

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  • Anisotropic etching method of graphite or graphene
  • Anisotropic etching method of graphite or graphene
  • Anisotropic etching method of graphite or graphene

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0031] The present invention proposes its own unique method for anisotropic etching of graphite or graphene, that is, the plasma anisotropic etching method of hydrogen-containing gas (including hydrogen, methane, ethylene, etc.). Typical edges of graphene nanoribbons are zigzag and armchair. The graphene nanoribbons processed by this method have atomic-level flat strip edges, and the edge structures are all zigzag configurations.

[0032] Such as figure 1 as shown, figure 1 It is a flow chart of a method for anisotropic etching of graphite or graphene provided by the present invention, the method comprising the following steps:

[0033] First, a hydrogen-containing gas is introduced into a plasma-enhanced chemical vapo...

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Abstract

The invention discloses an anisotropic etching method of graphite or grapheme, which is used for realizing crystal orientation of graphene, graphene cutting and patterning. The method comprises the following steps of: performing anisotropic etching on the surface of graphite or grapheme by adopting hydrogen-containing plasma, and forming a plurality of regular hexagonal holes on the surface of graphite or grapheme. All the hexagonal holes have the same orientation, the orientation is matched with the crystal orientation of graphene, etched edges have atomic scale smoothness, and all the edge structures are zigzag configurations. The invention overcomes the limitations existing in the traditional etching method of graphite or grapheme and realizes cutting and patterning graphene with controllable size and atomic scale smooth edges.

Description

technical field [0001] The invention relates to the field of integrated semiconductors and semiconductor processes and devices, in particular to a method for anisotropically etching graphite or graphene. Background technique [0002] Graphene is one of the key research objects in the fields of physics and materials science in recent years. It is a strictly two-dimensional crystal formed by sp 2 Hybridized carbon atoms bonded and has a hexagonal lattice honeycomb two-dimensional structure. Although the development history of graphene is relatively short (it was first reported by British scientists in 2004), its excellent physical properties and potential application prospects have attracted extensive attention from the physics and chemistry circles, and it has become an important component of carbon nanotubes in post-condensed matter physics and materials science. Another research hotspot in this field. [0003] Graphene has extremely good electronic properties, the carrie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/3065B82B3/00
Inventor 张广宇时东霞杨蓉王毅张连昌
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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