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Method for manufacturing floating gate discharging sharp corner

A manufacturing method and floating gate technology, applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as poor stability and flash memory erasing speed limitations

Inactive Publication Date: 2011-01-26
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] exist figure 1 Among them, if the discharge peak of the floating gate is sharper, the electric field E between the floating gate 12 and the control gate 11 TUN Also correspondingly larger, then the erasing speed of flash memory is also faster, but in fact, the sharp degree of the discharge cusp of the floating gate that the prior art makes is very low, then, the erasing speed of flash memory has been severely restricted, stability Correspondingly poor

Method used

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  • Method for manufacturing floating gate discharging sharp corner
  • Method for manufacturing floating gate discharging sharp corner
  • Method for manufacturing floating gate discharging sharp corner

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Embodiment

[0030] Refer below Figure 2 to Figure 7 The specific content of this embodiment will be described in detail. The manufacturing steps of the floating gate discharge peak of the present embodiment include:

[0031] Step 1: See figure 2 As shown, a first oxide layer 101, a floating gate layer 12', a first silicon oxynitride layer 21a', a second oxide layer 21b', a second silicon oxynitride layer 21c', and a control gate layer are sequentially formed on a substrate 100. 11', the third oxide layer 13', and the third silicon oxynitride layer 14'; wherein, the materials of the first oxide layer 101, the second oxide layer 21b', and the third oxide layer 13' can be but not limited to silicon oxide.

[0032] Step 2: see image 3 As shown, for the first silicon oxynitride layer 21a', the second oxide layer 21b', the second silicon oxynitride layer 21c', the control gate layer 11', the third oxide layer 13', the third silicon oxynitride layer 14' for masking and etching to form th...

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Abstract

The invention discloses a method for manufacturing a floating gate discharging sharp corner, which at least comprises the following steps: oxidizing the side wall of a floating grate to form a side wall oxide layer; and removing the side wall oxide layer and part of the floating grate top corner oxide layer to form the floating grate discharging sharp corner. The floating gate discharging sharp corner manufactured by the invention has high sharpness and can improve the erasing speed of Flash data.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing floating gate discharge sharp corners. Background technique [0002] Flash memory (Flash) is widely used in non-volatile memory (NVM, Non Volatile Memory) due to its high integration and fast programming capability based on Channel Hot Injection (CHI, Channel Hot Injection) mechanism. [0003] The data operation on Flash usually includes two modes: one is the programming mode, the data operation in this mode is based on the channel hot electron injection (Channel Hot Electrons injection) mechanism, the programming speed is fast, and the time is as short as microsecond (μs) level ; The second is the erasing mode. The data operation in this mode is based on the Fowler-Nordheim Injection (Fowler-Nordheim Injection) mechanism. The data erasing speed is slow, and the erasing time is as long as milliseconds (ms). [0004] In the Fowler Nordheim mec...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/283
Inventor 李勇刘艳周儒领黄淇生詹奕鹏
Owner SEMICON MFG INT (SHANGHAI) CORP
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