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Surface acoustic wave device

一种声表面波、波长的技术，应用在阻抗网络、压电器件/电致伸缩器件、用于压电器件或电致伸缩器件的材料选择等方向，能够解决声表面波装置电机械耦合系数增大、基板的欧拉角范围狭小等问题，达到大电机械耦合系数、反射系数大、提高特性的效果

Active Publication Date: 2010-12-08
MURATA MFG CO LTD
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  • Claims
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Problems solved by technology

In addition, in paragraph 0129 of Patent Document 1, although it is suggested that in LiNbO 3 Substrates can also use metals other than Au to form IDTs, but only IDTs made of Au are disclosed
[0010] On the other hand, in Patent Document 2, as mentioned above, in the case of using an IDT formed of a metal denser than Al, although it shows that the absolute value of the reflection coefficient can be improved, it does not specifically mention that the Increased electromechanical coupling coefficient of the resulting SAW device
[0011] In addition, in the orientation set above LiNbO 3 In the structure in which the IDT is formed by filling the grooves on the substrate with Au, there is a problem that in order to obtain a sufficiently large electromechanical coupling coefficient k 2 While LiNbO can be used 3 The Euler angle range of the substrate is narrow

Method used

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Embodiment Construction

[0074] Hereinafter, the present invention will be clarified by describing specific embodiments of the present invention with reference to the drawings.

[0075] figure 1 (a) and (b) are schematic partial front cross-sectional views of portions forming the IDT of the surface acoustic wave device according to the first embodiment of the present invention, and (b) is a schematic plan view of the surface acoustic wave device.

[0076] like figure 1 As shown in (a), the surface acoustic wave device 1 has LiNbO 3 Substrate 2. In LiNbO 3 A plurality of grooves 2b are formed on the upper surface 2a of the substrate 2 . The IDT 3 having a plurality of electrode fingers is formed by filling the plurality of grooves 2b with metal. The upper surface of the IDT 3 and the LiNbO 3The upper surface 2a of the substrate 2 becomes one surface.

[0077] SiO is formed to cover the upper surface 2a and the IDT 3 2 film4. In addition, in the present invention, it is not necessary to form ...

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Abstract

A surface acoustic wave device employing an LiNbO3 substrate, in which not only the reflection coefficient but also the electromechanical coupling coefficient k2 of an IDT are large, and the range of Euler angles of the LiNbO3 substrate for realizing a large electromechanical coupling coefficient k2 can be enlarged. Specifically disclosed is a surface acoustic wave device (1) wherein a plurality of grooves (2b) are formed in the upper surface (2a) of an LiNbO3 substrate (2), an IDT (3) having a plurality of electrode fingers composed of a metal material filling the plurality of grooves (2b) is provided, and the metal material is composed of Pt or W or an alloy principally comprising at least one of these metals.

Description

technical field [0001] The present invention relates to a surface acoustic wave (surface acoustic wave) device used as, for example, a resonator (rasonator) and a bandpass filter (bandpass filter). Metal to form the structure of the IDT SAW device. Background technique [0002] Currently, surface acoustic wave devices are widely used as resonators and bandpass filters. For example, the following patent document 1 discloses in Figure 26 A surface acoustic wave device 1001 schematically showing a cross-sectional structure. [0003] In the surface acoustic wave device 1001, the LiTaO 3 A plurality of grooves 1002b are formed on the upper surface 1002a of the substrate 1002 . Metal is filled into the plurality of grooves 1002b to form an IDT 1003 having a plurality of electrode fingers made of the metal. to cover LiTaO 3 The upper surface 1002a of the substrate 1002 is laminated with SiO 2 Film 1004. Because LiTaO 3 The substrate 1002 has a negative temperature coeffici...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/145H01L41/09H01L41/18H03H9/25
CPCH03H9/02559H03H9/14538
Inventor 门田道雄木村哲也
Owner MURATA MFG CO LTD
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