Method for separating base plate and semiconductor layer

Abstract

The invention relates to a method for separating a base plate and a semiconductor layer. The method is characterized in that a pattern silicon dioxide layer is formed between a temporary base plate and the semiconductor layer; then, the temporary base plate is separated from the pattern silicon dioxide layer by a secondary wet type etching way. The temporary base plate is removed by using the secondary wet type etching way, thereby avoiding damaging the structure of the semiconductor layer by using a the laser lift off (LLO) method. In addition, by utilizing the secondary wet type etching method, the manufacture process step is simpler, and the technical cost is decreased. On a vertical semiconductor element, the light emitting benefit of the element is increased due to the irregular surface formed by a manufacture process. In addition, by utilizing the wet type etching in the manufacture process, the batch amplification can be increased, and the cost of the manufacture process is decreased.

Description

technical field [0001] The present invention relates to a structure of a III-nitride semiconductor light-emitting element and a manufacturing method thereof, in particular to a method for separating a substrate and a semiconductor layer to form a III-nitride vertical light-emitting element. Background technique [0002] In recent years, LED research and development has mainly focused on improving GaN-based high-luminance LEDs (High-Power Light Emitting Diode). Therefore, GaN LEDs are rapidly extended to applications in extremely high-brightness fields, such as backlight units of various screens, to gradually replace traditional cold-cathode tubes or light bulbs. [0003] There are many ways to improve LED luminescence, such as using omnidirectional reflective cups, roughening the luminous surface, flip-chip technology, etc. The luminous efficiency will be reduced by 5% for every 10 degree increase in the temperature of the element. Since the sapphire substrate is a materia...

AI Technical Summary

Problems solved by technology

Although the sapphire substrate 602 can be directly removed from the CrN layer 604 by wet etching, the lattice mismatch between the CrN layer 604 and the GaN layer 616 is relatively high, and the epitaxy of GaN directly on the CrN layer is likely to cause poor epitaxy quality. Good, but also affect the luminous efficiency

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