Manufacturing method of thin film transistor and transistor manufactured by method

Abstract

The invention discloses a manufacturing method of a thin film transistor and a transistor manufactured by the method, wherein the method is characterized by comprising the following steps: sequentially forming a surface covering layer, a polycrystalline silicon island active layer, a grid insulating layer, a grid electrode conducting layer and an auxiliary layer on a baseplate, photoetching the auxiliary layer to form an LDD forming layer, and forming a lightly doped drain electrode region, a heavily doped source electrode, a heavily doped drain electrode and a channel on the polycrystalline silicon island active layer by utilizing the action of the LDD forming layer and through only once doped ion implantation. The method of the invention only needs once ion implantation, simplifies the manufacturing working procedures and lowers the manufacturing cost; the thin film transistor which is manufactured by adopting the method and provided with a lightly doped drain electrode has the advantages of small electrode area and large numerical aperture.

Description

technical field [0001] The invention relates to the field of manufacturing low-temperature polysilicon thin film transistors, in particular to a method for manufacturing thin film transistors with lightly doped drains and transistors manufactured by the method. Background technique [0002] Compared with traditional amorphous silicon (α-Si) thin film transistors, low-temperature polysilicon thin film transistors (LTPS TFTs) have higher electron mobility, fast response speed, short image data writing time, and are easy to realize large-area video display. In addition, polysilicon also has the characteristics of poor photosensitivity; stable operation; good transparency; self-alignment can be realized in the process; the peripheral drive circuit and display area can be integrated, etc., which solves the problem of too many leads and difficult A series of problems such as automatic detection make polysilicon TFT show an attractive prospect in the application of flat panel displ...

AI Technical Summary

Problems solved by technology

This method can also solve the symmetry of the lightly doped drain region, but the process is complicated and still requires two ion implantations

[0008] Existing technologies for manufacturing thin-film transistors with lightly doped drains require high-dose implantation to form the source-drain and low-dose implantation to form the lightly-doped drain. Two ion implantations complicate the production process of thin-film transistors , production costs are too high

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