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Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof

An antiferromagnetic layer, antiferromagnetic technology, applied in the application of magnetic film to substrate, multi-layer film of spin exchange coupling, magnetic layer, etc. Excellent binding performance, stable ferromagnetic/antiferromagnetic exchange bias system, and strong practicability

Inactive Publication Date: 2010-09-15
SOUTHWEAT UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this work does not explain the relationship between the enhanced thermal stability of IrMn and the artificial antiferromagnetic coupling strength and the ferromagnetic layer in the artificial antiferromagnetism.

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  • Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof
  • Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof
  • Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof

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Experimental program
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Embodiment 1

[0044] Embodiment 1: see attached figure 1 .

[0045] A ferromagnetic / antiferromagnetic multilayer film pinning material (magnetic multilayer film system), consisting of substrate 1, buffer layer 2, ferromagnetic layer I 3, antiferromagnetic layer 4, ferromagnetic layer II 5 Composed of protective layer 6;

[0046] Each layer material and parameter are: 1-substrate Si, 2-buffer layer Ta (thickness is 10nm), 3-ferromagnetic layer I SmCo (thickness is 50nm), 4-antiferromagnetic layer FeMn or IrMn (thickness is 10nm ), 5-ferromagnetic layer II NiFe (thickness is 15nm), and 6-protective layer Ta (thickness is 5nm); the thickness or composition of each layer is the value before vacuum deposition or annealing; the vacuum annealing temperature is 550 ° C , keep warm for 0.5 hours, and the vacuum degree is better than 10 -4 Pa.

Embodiment 2

[0047] Embodiment 2: see attached figure 1 .

[0048]A kind of ferromagnetic / antiferromagnetic multilayer film pinning material (magnetic multilayer film system), by: substrate 1, buffer layer 2, ferromagnetic layer 13, antiferromagnetic layer are plated on substrate 1 successively 4. Composition of ferromagnetic layer II 5 and protective layer 6;

[0049] Each layer material and parameter are: 1-substrate Si, 2-buffer layer Ta (thickness is 10nm), 3-ferromagnetic layer I FePt (thickness is 50nm), 4-antiferromagnetic layer FeMn or IrMn (thickness is 10nm ), 5-ferromagnetic layer II NiFe (thickness is 15nm), and 6-protective layer Ta (thickness is 5nm); above-mentioned each layer thickness or composition is the value before vacuum deposition sample or annealing; Vacuum annealing temperature is 600 ℃, keep warm for 1 hour, and the vacuum degree is better than 10 -4 Pa.

Embodiment 3

[0050] Embodiment 3: see attached figure 2 .

[0051] A ferromagnetic / antiferromagnetic multilayer film pinning material (magnetic multilayer film system), consisting of: a substrate 1, on which a buffer layer 2, a first ferromagnetic layer 3, and a first antiferromagnetic layer are sequentially plated on the substrate 1. The ferromagnetic layer 4, the second ferromagnetic layer 5, the second antiferromagnetic layer 6 and the protective layer 7 are composed.

[0052] Each layer material and parameter are: 1-substrate Si, 2-buffer layer Ta (thickness is 5nm), 3-the first ferromagnetic layer NiFe (thickness is 15nm), 4-the first antiferromagnetic layer FeMn (thickness is 5nm). 2.5nm), 5-second ferromagnetic layer NiFe (thickness is 10nm), 6-second antiferromagnetic layer FeMn (thickness is 10nm) and 7-protective layer Ta (thickness is 5nm); above-mentioned each layer thickness or composition All are the values ​​when the samples are vacuum deposited; attached image 3 Be the...

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Abstract

The invention discloses a ferromagnetic / anti-ferromagnetic multilayer film pinning material and a preparation method thereof. The multilayer film pinning material comprises a substrate and a buffer layer, a ferromagnetic layer I, an anti-ferromagnetic layer and a ferromagnetic layer II arranged on the substrate, and a protective layer arranged on the ferromagnetic layer II. The preparation method comprises that the layers are deposited on the substrate in turn by adopting magnetron sputtering to obtain the multilayer film material. The multilayer film pinning material prepared by the method of the invention not only successfully realizes ferromagnetic / anti-ferromagnetic exchange bias, but also enhances the pinning performance of an anti-ferromagnetic material by using exchange coupling effect so that a ferromagnetic / anti-ferromagnetic exchange bias system is more stable and is more suitable for the application of a magneto-electronic device; and the preparation process is simple and the performance of the material is stable.

Description

technical field [0001] The invention belongs to spin-exchange coupled multilayer magnetic films and a preparation method thereof, and relates to a ferromagnetic / antiferromagnetic multilayer film pinning material and a preparation method thereof. The pinning material is suitable as an element in magnetoelectronic devices, and can be directly applied to spin valves and magnetic tunnel junctions. Background technique [0002] Antiferromagnetic materials are mainly used as pinning layers in magnetoelectronics or spintronics components. The most basic requirements are large exchange anisotropy and high thermal stability, so that the system has High blocking temperature and large pinning field, but the antiferromagnetic pinning materials in the prior art often cannot satisfy these two basic conditions at the same time. [0003] Just as the exchange biasing effect of antiferromagnetism on ferromagnetism can enhance the thermal stability of ferromagnetic particles, the exchange cou...

Claims

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Application Information

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IPC IPC(8): H01F10/32H01F10/10H01F41/14
Inventor 代波蒋庆林邢永燕
Owner SOUTHWEAT UNIV OF SCI & TECH
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