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Tungsten-doped vanadium dioxide powder material and preparation method thereof

A technology of vanadium dioxide and powder materials, applied in vanadium oxide and other directions, can solve the problems of expensive preparation of raw materials, difficult to control, complicated preparation methods, etc., and achieve the effects of simple process, easy acquisition and simple operation.

Inactive Publication Date: 2012-03-07
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a tungsten-doped vanadium dioxide powder material, which solves the problems that the existing preparation methods of doped vanadium dioxide powder materials are complex and difficult to control, and the raw materials are expensive

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  • Tungsten-doped vanadium dioxide powder material and preparation method thereof
  • Tungsten-doped vanadium dioxide powder material and preparation method thereof
  • Tungsten-doped vanadium dioxide powder material and preparation method thereof

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preparation example Construction

[0029] The preparation method of tungsten-doped vanadium dioxide powder material of the present invention, as figure 1 As shown, the specific steps are as follows:

[0030] Step 1: Use a photoelectric balance to weigh 2.97%-3.19% reducing agent, 0%-6.89% industrial pure tungsten trioxide, and the balance is industrial pure vanadium pentoxide. The sum of the mass percentages of the above components is 100 %, mix uniformly on the mixer, and the scheduled mixing time is 4-6 hours. In order to prevent the powder from agglomerating and achieve the effect of full mixing and uniformity, it is necessary to add a certain amount of stainless steel balls to the mixed powder, and the ratio of balls to materials is about 2:1.

[0031] Step 2: Transfer the uniformly mixed powder obtained in step 1 into a ceramic reaction vessel, and then put it into a tube sintering furnace. First, open the gas flow valve, remove the air in the tubular sintering furnace, and then start the heating reactio...

Embodiment 1

[0034] 5gV 2 o 5 Powder and 0.165g C powder are mixed and mixed on the mixer for 4 hours, then loaded with pre-cleaned Al 2 o 3 reaction vessel, and then put it into a tube sintering furnace. One end of the tube sintering furnace is fed with N 2 The other end is connected with clarified lime water through a rubber tube. First open the ventilation valve, and after 30 minutes, turn on the heating switch of the tubular sintering furnace to start heating. Close the vent valve when it drops to around 100°C. XRD analysis results show that the reduction product is monoclinic phase VO 2 , higher purity. Such as Figure 4 As shown, it can be seen from the DSC curve that the phase transition point of the product is around 67.04°C, which is similar to that of the monoclinic phase VO 2 The phase transition temperature of 68 °C is in good agreement, which further proves the correctness of the XRD analysis results. The agglomeration of the reduced powder taken out from the tube si...

Embodiment 2

[0036] 5gV 2 o 5 Powder, 0.165gC and 0.40gWO 3 The powder (where the W / V atomic ratio is 3%) was uniformly mixed on the mixer for 5 hours, and then filled with pre-cleaned Al 2 o 3 reaction vessel, and then put it into a tube sintering furnace. One end of the tube sintering furnace is fed with N 2 The other end is connected with clarified lime water through a rubber tube. First open the ventilation valve, and after 30 minutes, turn on the heating switch of the tubular sintering furnace to start heating. Close the vent valve when it drops to around 100°C. XRD analysis results show that the reduction product is monoclinic phase VO 2 , there is no WO 3 The diffraction peaks of W 6+ Already dissolved in VO 2 lattice thus forming V 1-x W x o 2 solid solution. Such as Figure 5 As shown, it can be seen intuitively from the DSC curve that the phase transition temperature of the product has dropped to around 6.48°C, which further confirms that W 6+ The purpose of dopin...

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Abstract

The invention relates to a tungsten-doped vanadium dioxide powder material which comprises the following components by mass percent: 2.97-3.19 percent of reducing agent, 0-6.89 percent of industrial pure tungsten trioxide and balance industrial pure vanadium pentoxide; and the sum of the mass percent of the components is 100 percent. A preparation method of the tungsten-doped vanadium dioxide powder material comprises the steps of: first, weighing raw materials according to the mass percent, and mixing the raw materials for 4-6h; then, carrying out high temperature reduction on the evenly mixed powder under the protection of inert gas; and finally, dispersing and obtaining the tungsten-doped vanadium dioxide powder material. By adopting the tungsten-doped vanadium dioxide powder material and the preparation method thereof, vanadium dioxide is high in purity and single in crystal form, and the phase-transition temperature Tc can be controlled within the range of minus 2.9 to 67.04 DEG C according to the number of doped metal ions W6<+>, so that the optical, electrical, magnetic and other properties of the tungsten-doped vanadium dioxide powder material have mutation within the range of minus 2.9 to 67.04 DEG C, and the demand of special type functional material can be met.

Description

technical field [0001] The present invention belongs to the technical field of material preparation, and specifically relates to a tungsten-doped vanadium dioxide powder material, and also relates to a preparation method of the tungsten-doped vanadium dioxide powder material. Background technique [0002] Vanadium dioxide (VO 2 ) as a phase-change compound, it will transform from high-temperature tetragonal phase to low-temperature monoclinic phase around 68 °C. This phase transition occurs on the order of nanoseconds and is reversible for many times. A series of sudden changes in properties such as refractive index n, reflectivity R and resistivity. Therefore, vanadium dioxide has broad application prospects in smart window materials, optical storage, photoelectric switches, and infrared radiation detectors. At the same time, studies have shown that: VO 2 The phase transition temperature Tc can be adjusted by doping some atoms (such as: Mo, W, F, etc.), especially after ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G31/02
Inventor 邹军涛王春莲黄星王献辉梁淑华
Owner XIAN UNIV OF TECH
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