Method for measuring working junction temperature and thermal resistance of electronic component by utilizing vacuum environment

Abstract

The invention discloses a method for measuring working junction temperature and thermal resistance of an electronic component by utilizing a vacuum environment, which relates to the field of electronic component measurement, and comprises the following steps of: putting a measured component in a vacuum system, wherein the vacuum system is connected with external devices, and the external devices comprise an A / D acquisition board, a computer, a power supply and a heating power supply; placing a temperature-sensitive resistor A near the heat source source, which is the active area of the measured component; enabling a temperature-sensitive resistor B to contact with one surface of a heating sheet and the other surface of the heating sheet to contact with the bottom which is the heat dissipation endpoint of the measured component; acquiring the time t1 required for establishing the temperature gradient from the active area to the heat dissipation endpoint; and acquiring the time t2 acquired for establishing the temperature gradient from the heat dissipation endpoint to the active area; the power applied to the measured component is P, and the making time is t1+t2; when the temperature-sensitive resistors A and B tends to a steady state value, the temperature is the temperature of the measured component in normal work, and the working temperature rise and the thermal resistance of the measured component can be obtained. The method has no demand on the packaging forms semiconductor devices or function modules and belongs to a non-destructive test.

Description

technical field [0001] The invention relates to the production measurement of electronic devices, as well as the fields of research and development. Background technique [0002] When electronic components or functional modules are working, the heat concentration in the active area and the temperature rise are the key factors affecting their characteristics, reliability and life. Due to the small area of ​​the active region, it is difficult to measure its operating temperature. Commonly used methods include infrared temperature measurement, electrical parameter method, liquid crystal display and luminescent spectrum shift method, etc. Infrared temperature measurement method and liquid crystal display method can measure the temperature distribution on the surface of the chip, which may cause damage to the packaging of the device. The luminescence spectrum shift method measures temperature, and the device under test must have luminescence characteristics, which is not suitab...

AI Technical Summary

Problems solved by technology

The electrical parameter method can conveniently and quickly measure the temperature rise in the active area of ​​the device, but for most devices, the temperature-sensitive parameters that can be extracted are very limited, and some devices must be equipped with expensive special test circuits and equipment

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