High-speed insulated gate bipolar transistor on lateral SOI

Abstract

The invention relates to a high-speed insulated gate bipolar transistor on a lateral SOI. The insulated gate bipolar transistor comprises a buried oxide layer, an N-based region, a cathode region and an anode region which are respectively arranged at the two ends of the N-based region and a gate region, field oxide and an anode field plate which are arranged above the cathode region, wherein the anode region is partitioned into at least one group of a first anode region and a second anode region by an isolation groove; the isolation groove isolates the P+ anode region of a first anode from the P drift region and the N+ anode region of a second anode; the isolation groove extends downwards to the buried oxide layer; and the field oxide layer is attached on the anode region, and the anode field plate is attached on the field oxide and is electrically connected with the anode of the anode region. The invention has the beneficial effects that: an on-resistance is not added while the turn-off speed of lateral SOI IGBT is improved, and the high-speed insulated gate bipolar transistor on the lateral SOI is provided.

Description

technical field [0001] The invention relates to semiconductor high-voltage devices in the field of electronic technology, in particular to conductance modulation high-voltage power devices manufactured on SOI (Silicon On Insulator, silicon on insulating layer). Background technique [0002] As a key component of SOI high-voltage integrated circuits, lateral SOI IGBTs (SOI Insulated Gate Bipolar Transistors) have the advantages of high current capability and easy integration, but their switching speed is much faster than that of lateral double-diffused metal oxide semiconductors. The field effect transistor (LDMOS, Lateral Double-diffused MOSFET) has a slow turn-off speed, and due to the current tail of the lateral SOI insulated gate bipolar transistor, its switching loss is large, which affects the lateral SOI insulated gate bipolar transistor. Applications of transistors in power integrated circuits. [0003] The conventional lateral SOI IGBT structure in the prior art is ...

AI Technical Summary

Problems solved by technology

The SOI IGBT with this structure has a better compromise between speed and on-resistance, but because an external circuit is required to apply a bias voltage to the anode auxiliary gate 12, and the bias voltage is a floating voltage, it is difficult to implement and manufacture

[0006] The above-mentioned lateral SOI IGBTs in the prior art have either slow turn-off time or large turn-on resistance, and there is a trade-off problem between turn-on resistance and turn-off time, which fails to fundamentally solve the problem of slow turn-off time or slow turn-off time of the lateral SOI IGBT. Disadvantages of large on-resistance

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