Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming lightly doped drain

A lightly doped drain and gate structure technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as insufficient activation of impurities, achieve ideal distribution of doping ions, reduce tunneling effects, The effect of a steeper lateral edge

Active Publication Date: 2010-07-07
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides a method for forming a lightly doped drain, so as to improve the phenomenon of insufficient impurity activation that is prone to occur when the existing lightly doped drain has a low thermal budget

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming lightly doped drain
  • Method for forming lightly doped drain
  • Method for forming lightly doped drain

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0038] The processing method of the present invention can be widely used in various fields, and can utilize many suitable materials to make, and the following is to illustrate by specific embodiment, certainly the present invention is not limited to this specific embodiment, in this field Common replacements known to those of ordinary skill undoubtedly fall within the protection scope of the present invention.

[0039] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, which should not be u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for forming a lightly doped drain, which comprises the following steps: providing a substrate on the surface of which at least one grid structure is formed; using the grid structure as a mask and performing a de-crystallization treatment on the substrate to form a amorphous region; performing a phosphorus implantation treatment on the amorphous region; performing a co-implantation treatment on the de-crystallization region; and performing a quick thermal annealing treatment to form lightly doped drains on both sides of the grid structure. The thermal budget of an apparatus is lowered, a small junction depth is maintained and excellent electrical performance of the apparatus is obtained. The method is particularly beneficial for the manufacture of small-size apparatuses.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a lightly doped drain. Background technique [0002] The process of manufacturing semiconductor integrated circuit chips uses batch processing technology to form a large number of various types of complex devices on the same silicon substrate and connect them to each other to have complete electronic functions. With the rapid development of ultra-large-scale integrated circuits, the integration of chips is getting higher and higher, and the size of components is getting smaller and smaller. The various effects caused by the high density and small size of devices have an increasing impact on the results of semiconductor process manufacturing. protrude. [0003] Take the formation of a lightly doped drain (LDD, Light-Doped Drain) as an example. figure 1 A device cross-sectional schematic diagram for illustrating an existing method for form...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/335H01L21/336H01L21/265H01L21/324
Inventor 刘兵武居建华
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com