Method for forming lightly doped drain
A lightly doped drain and gate structure technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as insufficient activation of impurities, achieve ideal distribution of doping ions, reduce tunneling effects, The effect of a steeper lateral edge
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[0037] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0038] The processing method of the present invention can be widely used in various fields, and can utilize many suitable materials to make, and the following is to illustrate by specific embodiment, certainly the present invention is not limited to this specific embodiment, in this field Common replacements known to those of ordinary skill undoubtedly fall within the protection scope of the present invention.
[0039] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, which should not be u...
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