Substrate modification-based method for preparing anisotropic organic field effect transistor
An anisotropic and organic field technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of uneven film performance, easy introduction of impurities, poor repeatability, etc., to achieve high uniformity and artificial High controllability and good repeatability
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[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0027] like figure 1 as shown, figure 1 It is a flowchart of the method for preparing an anisotropic organic field effect transistor based on substrate modification provided by the present invention. The method is to modify the substrate by one-time insulating medium layer growth, one-time photolithography, one-time monolayer molecular self-assembly, and one-time organic semiconductor thin film Growth and primary metal deposition to obtain an anisotropic organic field effect tube, specifically including the following steps:
[0028] Step 101: growing an insulating dielectric layer on a conductive substrate;
[0029] Step 102: Spin-coat a photoresist protective layer on the surface of the insulating dielectric layer, and...
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